BUK7628-100A/C Datenblatt
![BUK7628-100A/C Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0001.webp)
![BUK7628-100A/C Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0002.webp)
![BUK7628-100A/C Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0003.webp)
![BUK7628-100A/C Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0004.webp)
![BUK7628-100A/C Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0005.webp)
![BUK7628-100A/C Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0006.webp)
![BUK7628-100A/C Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0007.webp)
![BUK7628-100A/C Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0008.webp)
![BUK7628-100A/C Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0009.webp)
![BUK7628-100A/C Datenblatt Seite 10](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0010.webp)
![BUK7628-100A/C Datenblatt Seite 11](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0011.webp)
![BUK7628-100A/C Datenblatt Seite 12](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0012.webp)
![BUK7628-100A/C Datenblatt Seite 13](http://pneda.ltd/static/datasheets/images/114/buk7628-100a-c-118-0013.webp)
Hersteller NXP USA Inc. Serie TrenchMOS™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 47A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V Vgs (th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3100pF @ 25V FET-Funktion - Verlustleistung (max.) 166W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D2PAK Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Hersteller Nexperia USA Inc. Serie Automotive, AEC-Q101, TrenchMOS™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 47A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V Vgs (th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3100pF @ 25V FET-Funktion - Verlustleistung (max.) 166W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D2PAK Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |