FQPF1N60T Datenblatt
![FQPF1N60T Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0001.webp)
![FQPF1N60T Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0002.webp)
![FQPF1N60T Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0003.webp)
![FQPF1N60T Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0004.webp)
![FQPF1N60T Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0005.webp)
![FQPF1N60T Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0006.webp)
![FQPF1N60T Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0007.webp)
![FQPF1N60T Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/23/fqpf1n60t-0008.webp)
Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 900mA (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.5Ohm @ 450mA, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 150pF @ 25V FET-Funktion - Verlustleistung (max.) 21W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220F Paket / Fall TO-220-3 Full Pack |
Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 900mA (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.5Ohm @ 450mA, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 150pF @ 25V FET-Funktion - Verlustleistung (max.) 21W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220F Paket / Fall TO-220-3 Full Pack |