IRFB3307ZGPBF Datenblatt
IRFB3307ZGPBF Datenblatt
Total Pages: 8
Größe: 243,58 KB
Infineon Technologies
Website: https://www.infineon.com
Dieses Datenblatt behandelt 1 Teilenummern:
IRFB3307ZGPBF
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 120A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 75A, 10V Vgs (th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 4750pF @ 50V FET-Funktion - Verlustleistung (max.) 230W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220AB Paket / Fall TO-220-3 |