PMV160UPVL Datenblatt
![PMV160UPVL Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0001.webp)
![PMV160UPVL Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0002.webp)
![PMV160UPVL Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0003.webp)
![PMV160UPVL Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0004.webp)
![PMV160UPVL Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0005.webp)
![PMV160UPVL Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0006.webp)
![PMV160UPVL Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0007.webp)
![PMV160UPVL Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0008.webp)
![PMV160UPVL Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0009.webp)
![PMV160UPVL Datenblatt Seite 10](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0010.webp)
![PMV160UPVL Datenblatt Seite 11](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0011.webp)
![PMV160UPVL Datenblatt Seite 12](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0012.webp)
![PMV160UPVL Datenblatt Seite 13](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0013.webp)
![PMV160UPVL Datenblatt Seite 14](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0014.webp)
![PMV160UPVL Datenblatt Seite 15](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0015.webp)
![PMV160UPVL Datenblatt Seite 16](http://pneda.ltd/static/datasheets/images/25/pmv160upvl-0016.webp)
Hersteller Nexperia USA Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 1.2A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 210mOhm @ 1.2A, 4.5V Vgs (th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 365pF @ 10V FET-Funktion - Verlustleistung (max.) 335mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket TO-236AB Paket / Fall TO-236-3, SC-59, SOT-23-3 |
Hersteller Nexperia USA Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 1.2A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 210mOhm @ 1.2A, 4.5V Vgs (th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 365pF @ 10V FET-Funktion - Verlustleistung (max.) 335mW (Ta), 2.17W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket TO-236AB Paket / Fall TO-236-3, SC-59, SOT-23-3 |