RQ3E180GNTB Datenblatt
RQ3E180GNTB Datenblatt
Total Pages: 12
Größe: 2.609,2 KB
Rohm Semiconductor
Website: https://www.rohm.com/
Dieses Datenblatt behandelt 1 Teilenummern:
RQ3E180GNTB
![RQ3E180GNTB Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0001.webp)
![RQ3E180GNTB Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0002.webp)
![RQ3E180GNTB Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0003.webp)
![RQ3E180GNTB Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0004.webp)
![RQ3E180GNTB Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0005.webp)
![RQ3E180GNTB Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0006.webp)
![RQ3E180GNTB Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0007.webp)
![RQ3E180GNTB Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0008.webp)
![RQ3E180GNTB Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0009.webp)
![RQ3E180GNTB Datenblatt Seite 10](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0010.webp)
![RQ3E180GNTB Datenblatt Seite 11](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0011.webp)
![RQ3E180GNTB Datenblatt Seite 12](http://pneda.ltd/static/datasheets/images/27/rq3e180gntb-0012.webp)
Hersteller Rohm Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 18A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 18A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22.4nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1520pF @ 15V FET-Funktion - Verlustleistung (max.) 2W (Ta) Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-HSMT (3.2x3) Paket / Fall 8-PowerVDFN |