SQ4064EY-T1_GE3 Datenblatt
SQ4064EY-T1_GE3 Datenblatt
Total Pages: 9
Größe: 180,88 KB
Vishay Siliconix
Dieses Datenblatt behandelt 1 Teilenummern:
SQ4064EY-T1_GE3
![SQ4064EY-T1_GE3 Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0001.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0002.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0003.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0004.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0005.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0006.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0007.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0008.webp)
![SQ4064EY-T1_GE3 Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/115/sq4064ey-t1_ge3-0009.webp)
Hersteller Vishay Siliconix Serie Automotive, AEC-Q101, TrenchFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 12A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 19.8mOhm @ 6.1A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 2096pF @ 25V FET-Funktion - Verlustleistung (max.) 6.8W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SOIC Paket / Fall 8-SOIC (0.154", 3.90mm Width) |