STD9N65M2 Datenblatt
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Hersteller STMicroelectronics Serie MDmesh™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 315pF @ 100V FET-Funktion - Verlustleistung (max.) 60W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DPAK Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller STMicroelectronics Serie MDmesh™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 315pF @ 100V FET-Funktion - Verlustleistung (max.) 20W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220FP Paket / Fall TO-220-3 Full Pack |
Hersteller STMicroelectronics Serie MDmesh™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 315pF @ 100V FET-Funktion - Verlustleistung (max.) 60W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket IPAK (TO-251) Paket / Fall TO-251-3 Short Leads, IPak, TO-251AA |
Hersteller STMicroelectronics Serie MDmesh™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 315pF @ 100V FET-Funktion - Verlustleistung (max.) 60W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220 Paket / Fall TO-220-3 |
