GeneSiC Semiconductor Gleichrichter - Arrays
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Arrays
HerstellerGeneSiC Semiconductor
Datensätze 906
Seite 1/31
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodenkonfiguration | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Betriebstemperatur - Verbindungsstelle | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-247-3 |
7.944 |
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- | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200V | 27A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
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GeneSiC Semiconductor |
SIC DIODE 1200V 15A TO-247-3 |
8.988 |
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- | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200V | 40A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
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GeneSiC Semiconductor |
SIC DIODE 1200V 20A TO-247-3 |
7.848 |
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- | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
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GeneSiC Semiconductor |
SIC DIODE 1200V 30A TO-247-3 |
7.452 |
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- | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200V | 75A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
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GeneSiC Semiconductor |
SIC DIODE 1200V 40A TO-247-3 |
6.252 |
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- | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200V | 90A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | -55°C ~ 175°C | Through Hole | TO-247-3 | TO-247-3 |
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GeneSiC Semiconductor |
SIC DIODE 1200V 100A SOT-227 |
5.076 |
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- | 2 Independent | Silicon Carbide Schottky | 1200V | 93A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE MOD SCHOT 650V 209A SOT227 |
8.874 |
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- | 2 Independent | Silicon Carbide Schottky | 650V | 209A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE MOD SCHOTTKY 1700V SOT227 |
6.642 |
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- | 2 Independent | Silicon Carbide Schottky | 1700V | 136A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1700V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE MODULE 45V 400A 3TOWER |
4.446 |
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- | 1 Pair Common Cathode | Schottky | 45V | 400A (DC) | 750mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 240A SOT227 |
8.964 |
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- | 2 Independent | Schottky | 45V | 240A | 700mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE MODULE 35V 160A TO249AB |
6.516 |
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- | 1 Pair Common Cathode | Schottky | 35V | 160A | 750mV @ 160A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | TO-249AB | TO-249AB |
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A 3TOWER |
5.274 |
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- | 1 Pair Common Cathode | Schottky | 40V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 400A 2TOWER |
50 |
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- | 1 Pair Common Cathode | Schottky | 100V | 400A (DC) | 840mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 400V 400A 3TOWER |
5.562 |
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- | 1 Pair Common Anode | Standard, Reverse Polarity | 400V | 200A (DC) | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 60A SOT227 |
5.688 |
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- | 2 Independent | Standard | 600V | 60A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 25µA @ 600V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 60A SOT227 |
8.496 |
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- | 2 Independent | Schottky | 100V | 60A | 840mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 120A SOT227 |
6.324 |
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- | 2 Independent | Standard | 400V | 120A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 400V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 120A SOT227 |
4.554 |
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- | 2 Independent | Schottky | 45V | 120A | 700mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 120A SOT227 |
6.498 |
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- | 2 Independent | Standard | 200V | 120A | 1V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 200V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 120A SOT227 |
6.030 |
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- | 2 Independent | Standard | 600V | 120A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 160A SOT227 |
5.058 |
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- | 2 Independent | Schottky | 45V | 160A | 700mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 60A SOT227 |
7.164 |
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- | 2 Independent | Schottky | 45V | 60A | 700mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 160A SOT227 |
8.082 |
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- | 2 Independent | Schottky | 100V | 160A | 840mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 100A SOT227 |
7.380 |
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- | 2 Independent | Schottky | 200V | 100A | 920mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -40°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 200A SOT227 |
4.140 |
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- | 2 Independent | Standard | 200V | 200A | 1V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 200V | -55°C ~ 175°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A SOT227 |
6.192 |
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- | 2 Independent | Schottky | 100V | 200A (DC) | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 80V | -40°C ~ 175°C | Screw Mount | SOT-227-4 | SOT-227 |
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GeneSiC Semiconductor |
DIODE MODULE 45V 400A SOT227 |
6.624 |
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- | 2 Independent | Schottky | 45V | 400A (DC) | 1.2V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 36V | -40°C ~ 175°C | Screw Mount | SOT-227-4 | SOT-227 |
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GeneSiC Semiconductor |
DIODE MODULE 100V 400A 3TOWER |
5.076 |
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- | 1 Pair Common Cathode | Schottky | 100V | 400A (DC) | 880mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 45V 500A 2TOWER |
8.424 |
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- | 1 Pair Common Cathode | Schottky | 45V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 35V 120A 2TOWER |
5.310 |
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- | 1 Pair Common Anode | Schottky | 35V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |