Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 616/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 1KV 15A TO247 |
8.838 |
|
- | Standard | 1000V | 15A | 3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 235ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 30A TO220 |
3.798 |
|
- | Standard | 1000V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 295ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
5.958 |
|
- | Standard | 1200V | 15A | 2.05V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 3.5µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247-3 |
5.256 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247-2 |
2.250 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 15A TO220 |
3.960 |
|
- | Standard | 1200V | 15A | 2.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1200V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 15A TO263AB |
3.690 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 300V | 15A | 1.25V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 40µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
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|
Infineon Technologies |
SIC DIODES |
5.778 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 24A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 1.2KV 20A TO220AC |
6.732 |
|
- | Standard | 1200V | 20A | 2.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 30µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 300V 5A DO215AB |
3.402 |
|
- | Standard | 300V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 3A 200V POWERMITE |
5.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
2.088 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1.2KV 15A TO247 |
8.100 |
|
- | Standard | 1200V | 15A | 3.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 240ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER |
5.328 |
|
- | Standard | 1200V | 15A (DC) | 1.97V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 50V 3A DO214AB |
4.536 |
|
- | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 100V 3A DO214AB |
4.014 |
|
- | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 3A DO214AB |
5.364 |
|
- | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 3A DO214AB |
7.686 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 300V 3A DO214AB |
5.490 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 3A DO214AB |
7.650 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 500V 3A DO214AB |
6.984 |
|
- | Standard | 500V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 3A DO214AB |
6.984 |
|
- | Standard | 600V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 700V 3A DO214AB |
7.542 |
|
- | Standard | 700V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 700V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 3A DO214AB |
3.240 |
|
- | Standard | 800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO247 |
7.686 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
2.646 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
8.514 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220AC |
8.784 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
1.721 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 15A | 2.45V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 15µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
3.528 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 15A | 2.45V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 15µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |