Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 434/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V POWERDI3333 |
6.318 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 20V | 17.5A (Ta), 40A (Tc) | 1.5V, 4.5V | 5.5mOhm @ 15A, 4.5V | 1V @ 250µA | 200nC @ 10V | ±10V | 7500pF @ 10V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V POWERDI3333 |
6.552 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 20V | 17.5A (Ta), 40A (Tc) | 1.5V, 4.5V | 5.5mOhm @ 15A, 4.5V | 1V @ 250µA | 200nC @ 10V | ±10V | 7500pF @ 10V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
8.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A 1212-8 |
3.526 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.6V @ 250µA | 43nC @ 10V | ±20V | 1765pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Rohm Semiconductor |
MOSFET P-CH 45V CPT3 |
6.840 |
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Vishay Siliconix |
MOSFET P-CH 30V 40A PPAK 8SO |
3.492 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | ±25V | 4620pF @ 15V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 80V 50A TO252 |
3.222 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 16mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 12V 80A POWERDI5060 |
8.604 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 12V | 80A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | 1V @ 250µA | 124nC @ 8V | ±8V | 6334pF @ 10V | - | 3.2W | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CHANNEL 40V 100A TO252 |
2.430 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 3.6mOhm @ 20A, 10V | 2.5V @ 250µA | 38.5nC @ 10V | ±20V | 2693pF @ 20V | - | 88W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CHANNEL 40V 100A TO252 |
5.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 3.6mOhm @ 20A, 10V | 2.5V @ 250µA | 38.5nC @ 10V | ±20V | 2693pF @ 20V | - | 88W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9.4A IPAK TRIMME |
5.058 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.4A (Ta), 41A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | ±20V | 837pF @ 15V | - | 1.38W (Ta), 26.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET P-CHANNEL 40V 11.4A 8SO |
7.812 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 11.4A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 91nC @ 10V | ±25V | 4234pF @ 20V | - | 1.8W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 60V 16.5A 8SO |
8.586 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 16.5A (Ta) | 4.5V, 10V | 6.5mOhm @ 16.5A, 10V | 2.2V @ 250µA | 25nC @ 4.5V | ±20V | 1652pF @ 30V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 85A 8DFN |
4.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 1.85mOhm @ 20A, 10V | 2.2V @ 250µA | 65nC @ 10V | ±20V | 3100pF @ 15V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 85A 8DFN |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 1.85mOhm @ 20A, 10V | 2.2V @ 250µA | 65nC @ 10V | ±20V | 3100pF @ 15V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
2.952 |
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ON Semiconductor |
MOSFET P-CH 40V 8DFN |
4.410 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
4.986 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
4.122 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
8.388 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
3.726 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
4.338 |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
3.636 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 4A SOT223 |
3.474 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10nC @ 10V | ±20V | 250pF @ 500V | - | 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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ON Semiconductor |
MOSFET P-CH 20V 5.2A 6UDFN |
8.604 |
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µCool™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | ±8V | 920pF @ 15V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 20V 3.4A 6UDFN |
7.866 |
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µCool™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | ±8V | 920pF @ 15V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 30V 6.3A UDFN6 |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 28.5mOhm @ 6.1A, 10V | 2.2V @ 250µA | 8.7nC @ 10V | ±20V | 476pF @ 15V | - | 650mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 6.3A UDFN6 |
7.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 28.5mOhm @ 6.1A, 10V | 2.2V @ 250µA | 8.7nC @ 10V | ±20V | 476pF @ 15V | - | 650mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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Sanken |
MOSFET N-CH 60V 30A TO-220F |
3.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 15.3mOhm @ 19.8A, 10V | 2.5V @ 350µA | 23.7nC @ 10V | ±20V | 1510pF @ 25V | - | 32W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 100V 18A TO-220F |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 4.5V, 10V | 48mOhm @ 11.9A, 10V | 2.5V @ 350µA | 23nC @ 10V | ±20V | 1530pF @ 25V | - | 32W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |