Toshiba Semiconductor and Storage Gleichrichter - Single

Serie

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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Betriebstemperatur - Verbindungsstelle

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 225

Seite 5/8

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
CUS10I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A US-FLAT	2.916	-	Schottky	40V	1A	490mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 40V	35pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	150°C (Max)
CRS05(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	3.598	-	Schottky	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS10I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE GEN PURP 40V 1A S-FLAT	2.340	-	Standard	40V	1A	490mV @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	60µA @ 40V	35pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS10I40B(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A S-FLAT	3.436	-	Schottky	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	62pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRF02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 500MA S-FLAT	4.338	-	Standard	800V	500mA	3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 800V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CUS15I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A US-FLAT	7.326	-	Schottky	30V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	50pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	150°C (Max)
CRS20I30B(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A S-FLAT	4.446	-	Schottky	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMF02(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 1A M-FLAT	4.572	-	Standard	600V	1A	2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 600V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS20I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A S-FLAT	3.978	-	Schottky	40V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 40V	35pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS20I40B(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A S-FLAT	2.268	-	Schottky	40V	2A	520mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	62pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS30I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A S-FLAT	5.400	-	Schottky	30V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	82pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS20I30A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A SFLAT	3.508	-	Schottky	30V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 30V	50pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CRS14(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A S-FLAT	5.004	-	Schottky	30V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS15(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A S-FLAT	2.412	-	Schottky	30V	3A (DC)	520mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRH01(TE85R,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A SFLAT	5.598	-	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CMF03(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 900V 500MA M-FLAT	4.374	-	Standard	900V	500mA	2.5V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 900V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS08(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A M-FLAT	3.150	-	Schottky	30V	1A	370mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	70pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS09(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A M-FLAT	5.472	-	Schottky	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	70pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMF01(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 2A MFLAT	6.318	-	Standard	600V	2A	2V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 600V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS30I40A(TE85L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A S-FLAT	7.650	-	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	62pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMG03(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 2A M-FLAT	5.508	-	Standard	600V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS13(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1A S-FLAT	2.952	-	Schottky	60V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	40pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	150°C (Max)
CMS17(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A M-FLAT	6.120	-	Schottky	30V	2A	480mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMG02(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 2A M-FLAT	5.400	-	Standard	400V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS12(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1A SFLAT	5.112	-	Schottky	60V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CMS21(TE12L,Q,M)	Toshiba Semiconductor and Storage	X35 PB-F DIODE M-FLAT MOQ=3000 V	8.712	-	-	-	-	-	-	-	-	-	-	-	-	-
CMS07(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A MFLAT	7.560	-	Schottky	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMH07(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 2A M-FLAT	2.250	-	Standard	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	10µA @ 200V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS10I30A(TE12L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A M-FLAT	3.222	-	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	82pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C (Max)
CMS10I40A(TE12L,QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A M-FLAT	8.694	-	Schottky	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	62pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	150°C (Max)

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