Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 377

Seite 5/13

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SA1020A,NSEIKIF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6.894	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020A,T6CSF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	2.646	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-O(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	3.294	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6.804	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-O,CKF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.254	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-O,F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6.840	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-O,T6CSF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.470	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(6MBH1,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	8.658	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	5.652	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(HIT,F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	5.724	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(ND1,AF)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6.930	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6CANOAF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	3.562	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6CANOFM	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	8.856	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	4.842	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	8.748	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6ND1,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.200	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6ND3,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	2.574	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	8.136	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6TOJ,FM	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.218	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6TR,A,F	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	5.022	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y(T6TR1,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	3.436	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.362	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,HOF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	7.434	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	4.356	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1020-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	6.426	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1315-Y,HOF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 80V TO226-3	2.988	-	PNP	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	80MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1315-Y,T6ASNF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 80V TO226-3	5.220	-	PNP	2A	80V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	80MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1382,T6MIBF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3	2.628	-	PNP	2A	50V	500mV @ 33mA, 1A	100nA (ICBO)	150 @ 500mA, 2V	900mW	110MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SA1425-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V SC71	6.858	-	PNP	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SA1428-O,T2CLAF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V SC71	8.568	-	PNP	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM

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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

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