FCH125N65S3R0-F155 Datenblatt
FCH125N65S3R0-F155 Datenblatt
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ON Semiconductor
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FCH125N65S3R0-F155
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Hersteller ON Semiconductor Serie SuperFET® III FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 24A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V Vgs (th) (Max) @ Id 4.5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 1940pF @ 400V FET-Funktion - Verlustleistung (max.) 181W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-247-3 Paket / Fall TO-247-3 |