FDFMA2P029Z-F106 Datenblatt
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Hersteller ON Semiconductor Serie PowerTrench® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.1A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V Vgs (th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 720pF @ 10V FET-Funktion Schottky Diode (Isolated) Verlustleistung (max.) 1.4W (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 6-MicroFET (2x2) Paket / Fall 6-VDFN Exposed Pad |
Hersteller ON Semiconductor Serie PowerTrench® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.1A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 95mOhm @ 3.1A, 4.5V Vgs (th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 720pF @ 10V FET-Funktion Schottky Diode (Isolated) Verlustleistung (max.) 1.4W (Tj) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 6-MicroFET (2x2) Paket / Fall 6-VDFN Exposed Pad |
