IRF7350TRPBF Datenblatt
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ N and P-Channel FET-Funktion Standard Drain to Source Voltage (Vdss) 100V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 380pF @ 25V Leistung - max 2W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ N and P-Channel FET-Funktion Standard Drain to Source Voltage (Vdss) 100V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.1A, 1.5A Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 380pF @ 25V Leistung - max 2W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
