IRF7752TR Datenblatt
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.6A Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 861pF @ 25V Leistung - max 1W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-TSSOP (0.173", 4.40mm Width) Lieferantengerätepaket 8-TSSOP |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.6A Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 861pF @ 25V Leistung - max 1W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-TSSOP (0.173", 4.40mm Width) Lieferantengerätepaket 8-TSSOP |
