NTLJD3183CZTBG Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N and P-Channel FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.6A, 2.2A Rds On (Max) @ Id, Vgs 68mOhm @ 2A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 355pF @ 10V Leistung - max 710mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-WDFN Exposed Pad Lieferantengerätepaket 6-WDFN (2x2) |
Hersteller ON Semiconductor Serie - FET-Typ N and P-Channel FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.6A, 2.2A Rds On (Max) @ Id, Vgs 68mOhm @ 2A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 355pF @ 10V Leistung - max 710mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-WDFN Exposed Pad Lieferantengerätepaket 6-WDFN (2x2) |
