NTMD3P03R2G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.34A Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 750pF @ 24V Leistung - max 730mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SOIC |
Hersteller ON Semiconductor Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.34A Rds On (Max) @ Id, Vgs 85mOhm @ 3.05A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 750pF @ 24V Leistung - max 730mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SOIC |
