NTMS5P02R2SG Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.95A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs (th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Eingangskapazität (Ciss) (Max) @ Vds 1900pF @ 16V FET-Funktion - Verlustleistung (max.) 790mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SOIC Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
Hersteller ON Semiconductor Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.95A (Ta) Antriebsspannung (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs (th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) - Eingangskapazität (Ciss) (Max) @ Vds 1900pF @ 16V FET-Funktion - Verlustleistung (max.) - Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SOIC Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
Hersteller ON Semiconductor Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.95A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs (th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Eingangskapazität (Ciss) (Max) @ Vds 1900pF @ 16V FET-Funktion - Verlustleistung (max.) 790mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SOIC Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
