SI4833ADY-T1-GE3 Datenblatt
![SI4833ADY-T1-GE3 Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0001.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0002.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0003.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0004.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0005.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0006.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0007.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0008.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0009.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 10](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0010.webp)
![SI4833ADY-T1-GE3 Datenblatt Seite 11](http://pneda.ltd/static/datasheets/images/22/si4833ady-t1-ge3-0011.webp)
Hersteller Vishay Siliconix Serie LITTLE FOOT® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.6A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 72mOhm @ 3.6A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 750pF @ 15V FET-Funktion Schottky Diode (Isolated) Verlustleistung (max.) 1.93W (Ta), 2.75W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SO Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
Hersteller Vishay Siliconix Serie LITTLE FOOT® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.6A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 72mOhm @ 3.6A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 750pF @ 15V FET-Funktion Schottky Diode (Isolated) Verlustleistung (max.) 1.93W (Ta), 2.75W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SO Paket / Fall 8-SOIC (0.154", 3.90mm Width) |