SIA445EDJT-T1-GE3 Datenblatt
SIA445EDJT-T1-GE3 Datenblatt
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Vishay Siliconix
Dieses Datenblatt behandelt 1 Teilenummern:
SIA445EDJT-T1-GE3
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Hersteller Vishay Siliconix Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 12A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 16.7mOhm @ 7A, 4.5V Vgs (th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 2180pF @ 10V FET-Funktion - Verlustleistung (max.) 19W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket PowerPAK® SC-70-6 Single Paket / Fall PowerPAK® SC-70-6 |