SSN1N45BBU Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 500mA (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.25Ohm @ 250mA, 10V Vgs (th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±50V Eingangskapazität (Ciss) (Max) @ Vds 240pF @ 25V FET-Funktion - Verlustleistung (max.) 900mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-92-3 Paket / Fall TO-226-3, TO-92-3 (TO-226AA) |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 500mA (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.25Ohm @ 250mA, 10V Vgs (th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±50V Eingangskapazität (Ciss) (Max) @ Vds 240pF @ 25V FET-Funktion - Verlustleistung (max.) 900mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-92-3 Paket / Fall TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
