STD5407NT4G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 7.6A (Ta), 38A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V Vgs (th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1000pF @ 32V FET-Funktion - Verlustleistung (max.) 2.9W (Ta), 75W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DPAK Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 7.6A (Ta), 38A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 20A, 10V Vgs (th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1000pF @ 32V FET-Funktion - Verlustleistung (max.) 2.9W (Ta), 75W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DPAK Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
