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Global Power Technologies Group Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerGlobal Power Technologies Group
Datensätze 65
Seite 2/3
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
GDP08S120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 8A TO220-2
5.472
Amp+™
Silicon Carbide Schottky
1200V
8A
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
477pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP12S060A
Global Power Technologies Group
DIODE SCHOTTKY 600V 12A TO220-2
6.732
Amp+™
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
487pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP12S060D
Global Power Technologies Group
DIODE SCHOTTKY 600V 12A TO263-2
4.482
Amp+™
Silicon Carbide Schottky
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
487pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 135°C
GDP15S120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 15A TO220-2
2.034
Amp+™
Silicon Carbide Schottky
1200V
15A (DC)
1.7V @ 15A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
895pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 135°C
GDP15S120B
Global Power Technologies Group
DIODE SCHOTTKY 1200V 15A TO247-2
3.582
Amp+™
Silicon Carbide Schottky
1200V
15A (DC)
1.7V @ 15A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
895pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP24P060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 24A TO247-2
2.016
Amp+™
Silicon Carbide Schottky
600V
24A (DC)
1.7V @ 24A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
973pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP30P120B
Global Power Technologies Group
DIODE SCHOTTKY 1200V 81A TO247-2
8.622
Amp+™
Silicon Carbide Schottky
1200V
81A
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
1790pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP30S120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 30A TO247-2
7.002
Amp+™
Silicon Carbide Schottky
1200V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
1790pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP36Z060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 36A TO247-2
4.482
Amp+™
Silicon Carbide Schottky
600V
36A (DC)
1.7V @ 36A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
1460pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP50P120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 50A TO247-2
7.146
Amp+™
Silicon Carbide Schottky
1200V
50A (DC)
1.7V @ 50A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
2984pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GDP60Z120E
Global Power Technologies Group
DIODE SCHOTT 1.2KV 60A TO247-2
7.614
Amp+™
Silicon Carbide Schottky
1200V
60A (DC)
1.7V @ 60A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
3581pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 135°C
GP2D005A120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 5A TO220-2
5.706
Amp+™
Silicon Carbide Schottky
1200V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
317pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GP2D005A120C
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 5A DPAK-2
3.168
Amp+™
Silicon Carbide Schottky
1200V
5A
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1200V
317pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2L (DPAK)
-55°C ~ 175°C
GP2D005A170B
Global Power Technologies Group
DIODE SCHOTTKY 1700V 5A TO247-2
4.860
Amp+™
Silicon Carbide Schottky
1700V
5A (DC)
1.75V @ 5A
No Recovery Time > 500mA (Io)
0ns
10µA @ 1700V
406pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D006A065A
Global Power Technologies Group
DIODE SCHOTTKY 650V 6A TO220-2
225
Amp+™
Silicon Carbide Schottky
650V
6A
1.65V @ 6A
No Recovery Time > 500mA (Io)
0ns
60µA @ 650V
316pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GP2D006A065C
Global Power Technologies Group
DIODE SCHOTTKY 650V 6A TO252-2
8.460
Amp+™
Silicon Carbide Schottky
650V
6A (DC)
1.65V @ 6A
No Recovery Time > 500mA (Io)
0ns
60µA @ 650V
316pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2L (DPAK)
-55°C ~ 175°C
GP2D010A120A
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 10A TO220-2
8.586
Amp+™
Silicon Carbide Schottky
1200V
10A
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
20µA @ 1200V
635pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GP2D010A120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 10A TO247-2
5.976
Amp+™
Silicon Carbide Schottky
1200V
10A
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
20µA @ 1200V
635pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D010A120C
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 10A TO252-2
4.824
Amp+™
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
20µA @ 1200V
635pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2L (DPAK)
-55°C ~ 175°C
GP2D010A170B
Global Power Technologies Group
DIODE SCHOTTKY 1.7KV 10A TO247-2
3.330
Amp+™
Silicon Carbide Schottky
1700V
10A
1.75V @ 10A
No Recovery Time > 500mA (Io)
0ns
20µA @ 1700V
812pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D020A120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 20A TO247-2
231
Amp+™
Silicon Carbide Schottky
1200V
20A (DC)
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
1270pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D020A170B
Global Power Technologies Group
DIODE SCHOTTKY 1.7KV 20A TO247-2
7.938
Amp+™
Silicon Carbide Schottky
1700V
20A (DC)
1.75V @ 20A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1700V
1624pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D030A120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 30A TO247-2
5.724
Amp+™
Silicon Carbide Schottky
1200V
30A (DC)
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
60µA @ 1200V
1905pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D015A120B
Global Power Technologies Group
DIODE SCHOTTKY 1200V 15A TO247-2
5.742
Amp+™
Silicon Carbide Schottky
1200V
15A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
30µA @ 1200V
54pF @ 1200V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D010A065A
Global Power Technologies Group
DIODE SCHOTTKY 650V 30A TO220-2
1.559
Amp+™
Silicon Carbide Schottky
650V
30A (DC)
1.65V @ 10A
No Recovery Time > 500mA (Io)
-
100µA @ 650V
527pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GP2D010A065C
Global Power Technologies Group
DIODE SCHOTTKY 650V 30A TO252
3.726
Amp+™
Silicon Carbide Schottky
650V
30A (DC)
1.65V @ 10A
No Recovery Time > 500mA (Io)
-
100µA @ 650V
527pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-55°C ~ 175°C
GP2D020A065B
Global Power Technologies Group
DIODE SCHOTTKY 650V 58A TO247-2
5.605
Amp+™
Silicon Carbide Schottky
650V
58A (DC)
1.65V @ 20A
No Recovery Time > 500mA (Io)
-
200µA @ 650V
1054pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP2D060A120B
Global Power Technologies Group
DIODE SCHOTKY 1.2KV 182A TO247-2
8.406
Amp+™
Silicon Carbide Schottky
1200V
182A (DC)
1.8V @ 60A
No Recovery Time > 500mA (Io)
-
500µA @ 1200V
3809pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GP3D050A060B
Global Power Technologies Group
DIODE SCHOTTKY 600V 50A TO247-2
8.118
*
-
-
-
-
-
-
-
-
-
-
-
-
GP3D050A120B
Global Power Technologies Group
DIODE SCHOTTKY 1.2KV 50A TO247-2
5.292
*
-
-
-
-
-
-
-
-
-
-
-
-