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IXYS Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerIXYS
Datensätze 2.184
Seite 73/73
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
IXFM67N10
IXYS
POWER MOSFET TO-3
6.750
HiPerFET™
N-Channel
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
25mOhm @ 33.5A, 10V
4V @ 4mA
260nC @ 10V
±20V
4500pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXTM10P60
IXYS
POWER MOSFET TO-3
5.148
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM11N80
IXYS
POWER MOSFET TO-3
5.166
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
950mOhm @ 5.5A, 10V
4.5V @ 250µA
170nC @ 10V
±20V
4500pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
IXTM11P50
IXYS
POWER MOSFET TO-3
7.794
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM12N100
IXYS
POWER MOSFET TO-3
2.592
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
1000V
12A (Tc)
10V
1.05Ohm @ 6A, 10V
4.5V @ 250µA
170nC @ 10V
±20V
4000pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
IXTM1316
IXYS
POWER MOSFET TO-3
2.196
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM15N60
IXYS
POWER MOSFET TO-3
5.202
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM1630
IXYS
POWER MOSFET TO-3
5.076
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM1712
IXYS
POWER MOSFET TO-3
6.318
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM21N50L
IXYS
POWER MOSFET TO-3
3.042
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM24N50L
IXYS
POWER MOSFET TO-3
6.552
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTM35N30
IXYS
POWER MOSFET TO-3
6.102
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
300V
35A (Tc)
10V
100mOhm @ 17.5A, 10V
4V @ 250µA
220nC @ 10V
±20V
4600pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXTM40N30
IXYS
POWER MOSFET TO-3
7.200
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
300V
40A (Tc)
10V
88mOhm @ 20A, 10V
4V @ 250µA
220nC @ 10V
±20V
4600pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXTM50N20
IXYS
POWER MOSFET TO-3
7.092
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
200V
50A (Tc)
10V
45mOhm @ 25A, 10V
4V @ 250µA
220nC @ 10V
±20V
4600pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXTM5N100
IXYS
POWER MOSFET TO-3
6.984
-
N-Channel
MOSFET (Metal Oxide)
1000V
5A (Tc)
10V
2.4Ohm @ 2.5A, 10V
4.5V @ 250µA
130nC @ 10V
±20V
2600pF @ 25V
-
180W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
IXTM5N100A
IXYS
POWER MOSFET TO-3
5.922
-
N-Channel
MOSFET (Metal Oxide)
1000V
5A (Tc)
10V
2Ohm @ 2.5A, 10V
4.5V @ 250µA
130nC @ 10V
±20V
2600pF @ 25V
-
180W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
IXTM67N10
IXYS
POWER MOSFET TO-3
6.642
GigaMOS™
N-Channel
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
25mOhm @ 33.5A, 10V
4V @ 4mA
260nC @ 10V
±20V
4500pF @ 25V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXTM6N90A
IXYS
POWER MOSFET TO-3
6.534
-
N-Channel
MOSFET (Metal Oxide)
900V
6A (Tc)
10V
1.4Ohm @ 3A, 10V
4.5V @ 250µA
130nC @ 10V
±20V
2600pF @ 25V
-
180W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
IXTM9226
IXYS
POWER MOSFET TO-3
6.894
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTD2N60P-1J
IXYS
MOSFET N-CH 600
2.574
PolarHV™
N-Channel
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
5.1Ohm @ 1A, 10V
5V @ 250µA
7nC @ 10V
±30V
240pF @ 25V
-
56W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXTD3N50P-2J
IXYS
MOSFET N-CH 500
8.424
PolarHV™
N-Channel
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
2Ohm @ 1.5A, 10V
5.5V @ 50µA
9.3nC @ 10V
±30V
409pF @ 25V
-
70W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXTD3N60P-2J
IXYS
MOSFET N-CH 600
2.100
PolarHV™
N-Channel
MOSFET (Metal Oxide)
600V
3A (Tc)
10V
2.9Ohm @ 1.5A, 10V
5.5V @ 50µA
9.8nC @ 10V
±30V
411pF @ 25V
-
70W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXTD4N80P-3J
IXYS
MOSFET N-CH 800
8.208
PolarHV™
N-Channel
MOSFET (Metal Oxide)
800V
3.6A (Tc)
10V
3.4Ohm @ 1.8A, 10V
5.5V @ 100µA
14.2nC @ 10V
±30V
750pF @ 25V
-
100W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXTP28N15P
IXYS
MOSFET N-CH TO-220
4.698
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-