Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 615/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
DIODE GEN PURP 800V 30A TO263 |
4.590 |
|
- | Standard | 800V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 800V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -40°C ~ 175°C |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 12A TO263AB |
8.100 |
|
Qspeed™ | Standard | 600V | 12A | 3.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 11.6ns | 250µA @ 600V | 34pF @ 10V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 8A DO214AB |
4.554 |
|
- | Schottky | 45V | 8A | 620mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO263AB |
8.226 |
|
Automotive, AEC-Q101, HEXFRED® | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
8.982 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 1600V TO-247 |
2.772 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 1200V TO-247 |
7.632 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 1200V TO-247 |
5.850 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
650V 4A SIC SBD |
4.032 |
|
- | Silicon Carbide Schottky | 650V | 8.6A (DC) | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200mA @ 650V | 258pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 8A DO214AB |
2.538 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO263-2 |
12.272 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 19A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | - | 50µA @ 600V | 295pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 12V 16A 8VFQFPN |
2.646 |
|
ECOPACK® | Schottky | 12V | 16A (DC) | 140mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 12V | - | Surface Mount | 8-PowerVDFN | 8-VFQFPN (6x5) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
650V 8A SIC SBD |
8.064 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
8.820 |
|
- | Schottky | 45V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 1A DO213AB |
3.492 |
|
- | Schottky | 50V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 50V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -65°C ~ 150°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 1A AXIAL |
8.766 |
|
- | Standard | 800V | 1A | 2.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 800V | 30pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3 |
8.064 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 1600V TO-247 |
3.006 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 50V 125MA DO34 |
4.626 |
|
- | Standard | 50V | 125mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 30ns | 100nA @ 50V | - | Through Hole | DO-204AG, DO-34, Axial | DO-34 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
6.552 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 5A DO215AB |
8.442 |
|
- | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
PIV 150V IO 60A CHIP SIZE 200MIL |
2.304 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 100V IO 60A CHIP SIZE 200MIL |
6.840 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
2.178 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 150pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220-2 |
6.192 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A TO263AB |
8.928 |
|
Automotive, AEC-Q101, HEXFRED® | Standard | 600V | 25A | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
8.460 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247-3 |
7.236 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247-2 |
6.372 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247 Long Leads | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 15V 6A POWERMITE |
8.838 |
|
- | Schottky | 15V | 6A | 320mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 15V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |