Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
Datensätze 46.590
Seite 581/1553
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
5.940 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 167MHz | - | 3.4ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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|
|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100TQFP |
6.768 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 200MHz | - | 3ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
Cypress Semiconductor |
IC SRAM 18M PARALLEL 100MHZ |
6.156 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 100MHz | - | 8.5ns | 3.135V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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|
Micron Technology Inc. |
IC DRAM 12G 1600MHZ FBGA |
6.156 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 12Gb (384M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
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Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
7.218 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 12Gb (384M x 32) | - | 2.133GHz | - | - | 0.6V, 1.1V | -40°C ~ 95°C (TC) | Surface Mount | - | - |
|
|
|
Cypress Semiconductor |
IC NVSRAM 4M PARALLEL 48FBGA |
2.808 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (512K x 8) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (6x10) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 72K PARALLEL 68PLCC |
2.538 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 72Kb (8K x 9) | Parallel | - | 12ns | 12ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 68-LCC (J-Lead) | 68-PLCC (24.21x24.21) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96LFBGA |
6.300 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 8Gb (512M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LFBGA (10x14) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
4.716 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | - | - | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
90 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 100ns | 100ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.016 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.070 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
88 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
8.712 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 85ns | 85ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.880 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 100ns | 100ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.304 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
266 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 35ns | 35ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.160 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
5.040 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 55ns | 55ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
3.305 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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|
IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 28CERDIP |
2.664 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 85ns | 85ns | 4.5V ~ 5.5V | -55°C ~ 125°C (TA) | Through Hole | 28-CDIP (0.600", 15.24mm) | 28-CerDip |
|
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48MGA |
8.802 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 20ns | 20ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (9x11) |
|
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Everspin Technologies Inc. |
IC RAM 4M PARALLEL 44TSOP2 |
4.644 |
|
Automotive, AEC-Q100 | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 4Mb (256K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2.952 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 100TQFP |
5.742 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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|
Micron Technology Inc. |
IC FLASH 128G MMC |
313 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
|
|
|
Micron Technology Inc. |
IC FLASH 128G MMC |
4.158 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | MMC | - | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
|
|
|
Everspin Technologies Inc. |
IC RAM 4M PARALLEL 44TSOP2 |
8.640 |
|
Automotive, AEC-Q100 | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 4Mb (512K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 18M PARALLEL 100TQFP |
6.120 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 18Mb (1M x 18) | Parallel | - | - | 7.5ns | 2.375V ~ 2.625V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 64K PARALLEL 100CABGA |
4.698 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 64Kb (4K x 16) | Parallel | - | 65ns | 65ns | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 100-TFBGA | 100-CABGA (6x6) |