Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 465/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V TO220F PKG |
3.580 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | ±30V | 465pF @ 400V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
5.958 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
6.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 12A TO262F |
7.956 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1633pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Diodes Incorporated |
MOSFET N-CH 60V 23A POWERDI5060 |
3.544 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 11.8A TO252 |
2.412 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 11.8A (Ta) | 4.5V, 10V | 40mOhm @ 7.3A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 1426pF @ 30V | - | 10.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 50A POWERPAKSO-8 |
4.338 |
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TrenchFET® Gen III | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 10V | 2.3mOhm @ 15A, 10V | 1.5V @ 250µA | 133nC @ 10V | ±12V | 5125pF @ 10V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4.014 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 4.5V, 10V | 26.3mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | ±20V | 2700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
3.060 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK |
7.938 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
4.320 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 8A TO220SIS |
7.920 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Ta) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO220F |
6.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 550mOhm @ 6A, 10V | 4.5V @ 250µA | 50nC @ 10V | ±30V | 2100pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 700V 12.5A TO220 |
3.708 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | 517pF @ 400V | - | 26.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
6.660 |
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ON Semiconductor |
MOSFET N-CH 600V TO-220F-3 |
6.480 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2Ohm @ 2.25A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 865pF @ 25V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 25V 71A DFN5X6 |
8.460 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 71A (Ta), 200A (Tc) | 4.5V, 10V | 0.95mOhm @ 20A, 10V | 2V @ 250µA | 145nC @ 10V | ±20V | 7036pF @ 15V | - | 7.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO252 |
4.428 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.2mOhm @ 90A, 10V | 4V @ 250µA | 68.6nC @ 10V | ±20V | 4305pF @ 25V | - | 3.9W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 28A 150A 5DFN |
7.308 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V TO252 T&R |
7.578 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 12mOhm @ 25A, 10V | 2V @ 250µA | 49.1nC @ 10V | ±12V | 3077pF @ 30V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 18.5A U8FL |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 18.5A (Ta), 66A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | 2.1V @ 250µA | 12.4nC @ 10V | ±20V | 771pF @ 12V | - | 2.64W (Ta), 33.8W (Tc) | 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 80V 8WDFN |
6.228 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A WPAK |
5.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.8mOhm @ 22.5A, 10V | - | 21.2nC @ 4.5V | ±20V | 3850pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 40V 35A 185A 5DFN |
2.808 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 12A TO220F |
3.222 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1633pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO262F |
8.010 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Full Pack, I²Pak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO262F |
2.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1990pF @ 25V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Full Pack, I²Pak |
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Infineon Technologies |
MOSFET N CH 100V 56A IPAK |
3.690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 3031pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
LOW POWER_LEGACY |
7.938 |
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