Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 646/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80nC @ 20V | ±20V | 900pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 11A TO-252AA |
6.660 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 107mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | ±16V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 50V 8A I-PAK |
7.614 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 8A (Tc) | 10V | 300mOhm @ 8A, 10V | 4V @ 250µA | 80nC @ 20V | ±20V | - | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 50V 8A TO-252AA |
8.730 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 8A (Tc) | - | 300mOhm @ 8A, 10V | 4V @ 250µA | 80nC @ 20V | - | - | - | - | - | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 50V 60A TO-247 |
3.042 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 60A (Tc) | 10V | 30mOhm @ 60A, 10V | 4V @ 250µA | 450nC @ 20V | ±20V | 7200pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 70A TO-247 |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 14mOhm @ 70A, 10V | 4V @ 250µA | 156nC @ 20V | ±20V | 2250pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 50V 14A TO-220AB |
3.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | - | 100mOhm @ 14A, 10V | 4V @ 250µA | 40nC @ 20V | - | 570pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 50V 15A TO-220AB |
3.330 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 150mOhm @ 15A, 10V | 4V @ 250µA | 150nC @ 20V | ±20V | 1150pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 2A TO-220AB |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Tc) | 5V | 1.05Ohm @ 2A, 5V | 2V @ 250µA | - | ±10V | 200pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 11A TO-220AB |
4.356 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 107mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | ±16V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 30A TO-220AB |
5.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 5V | 47mOhm @ 30A, 5V | 2V @ 250µA | 62nC @ 10V | +10V, -8V | 1350pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 50V 30A TO-220AB |
3.816 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 30A (Tc) | - | 65mOhm @ 30A, 10V | 4V @ 250µA | 170nC @ 20V | - | 3200pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 30A TO-220AB |
8.388 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | - | 65mOhm @ 30A, 10V | 4V @ 250µA | 170nC @ 20V | - | 3200pF @ 25V | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 40A TO-220AB |
5.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 45A TO-220AB |
4.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 28mOhm @ 45A, 10V | 4V @ 250µA | 150nC @ 20V | ±20V | 2050pF @ 25V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1KV 4.3A TO-220AB |
6.012 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4.3A (Tc) | - | 3.5Ohm @ 2.5A, 10V | 4V @ 250µA | 120nC @ 20V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 50V 8A TO-220AB |
7.020 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 8A (Tc) | - | 300mOhm @ 8A, 10V | 4V @ 250µA | 80nC @ 20V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 20V 1.7A SSOT3 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 110mOhm @ 1.7A, 4.5V | 1V @ 250µA | 9nC @ 4.5V | 8V | 240pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A MICRO8 |
4.482 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | ±12V | 1066pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 180A TO-220AB |
2.502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8-SOP |
4.014 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 20mOhm @ 5A, 10V | 2V @ 1mA | 45nC @ 10V | ±20V | 2260pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK |
7.290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 0.9A 6-TSOP |
2.556 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 900mA (Ta) | 10V | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 12V 15A 8-SOIC |
4.770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 15A (Ta) | 2.8V, 4.5V | 8mOhm @ 15A, 4.5V | 1.9V @ 250µA | 40nC @ 4.5V | ±12V | 2550pF @ 6V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 500V 20A TO-247AD |
3.960 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Panasonic Electronic Components |
MOSFET N-CH 80V 500MA 3-SIP |
7.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 500mA (Ta) | 10V | 4Ohm @ 500mA, 10V | 3.5V @ 1mA | - | 20V | 45pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Through Hole | M-A1 | 3-SIP |
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Panasonic Electronic Components |
MOSFET N-CH 80V 500MA MINI-PWR |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 500mA (Ta) | 10V | 4Ohm @ 500mA, 10V | 3.5V @ 1mA | - | 20V | 45pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | MiniP3-F1 | TO-243AA |
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Panasonic Electronic Components |
MOSFET N-CH 30V 1A MINI-PWR |
7.902 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4V, 10V | 600mOhm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 87pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | MiniP3-F1 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO-220AB |
17.011 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB |
7.416 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |