Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - RF
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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - RF
HerstellerToshiba Semiconductor and Storage
Datensätze 35
Seite 2/2
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Beschreibung |
Auf Lager |
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Serie | Transistortyp | Spannung - Kollektor-Emitter-Durchschlag (max.) | Frequenz - Übergang | Rauschzahl (dB Typ @ f) | Gewinn | Leistung - max | Gleichstromverstärkung (hFE) (min) @ Ic, Vce | Strom - Kollektor (Ic) (max.) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
TRANS RF NPN 10V 1GHZ SSM |
3.204 |
|
- | NPN | 10V | 6GHz | - | 11dB | 100mW | 120 @ 5mA, 5V | 30mA | - | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
RF TRANS NPN 30V 550MHZ SSM |
7.434 |
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- | NPN | 30V | 550MHz | 2.3dB ~ 5dB @ 100MHz | 17dB ~ 23dB | 100mW | 100 @ 1mA, 6V | 20mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
RF TRANS NPN 10V 10GHZ SSM |
2.682 |
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- | NPN | 10V | 10GHz | 1.4dB @ 1GHz | 1.4dB | 100mW | 50 @ 7mA, 6V | 15mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
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Toshiba Semiconductor and Storage |
RF TRANS NPN 12V 7GHZ USQ |
5.292 |
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- | NPN | 12V | 7GHz | 1dB @ 500MHz | 18dB | 100mW | 80 @ 20mA, 10V | 80mA | 125°C (TJ) | Surface Mount | SC-82A, SOT-343 | USQ |
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Toshiba Semiconductor and Storage |
RF TRANS NPN 12V 7GHZ SSM |
4.662 |
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- | NPN | 12V | 7GHz | 1dB @ 500MHz | - | 100mW | 120 @ 10mA, 5V | 30mA | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |