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Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 26/27
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
SSM3K7002BF,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 0.2A S-MINI
6.444
U-MOSIV
N-Channel
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
2.1Ohm @ 500mA, 10V
-
-
±20V
17pF @ 25V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SC-59
TO-236-3, SC-59, SOT-23-3
TK12V60W,LVQ
Toshiba Semiconductor and Storage
MOSFET N CH 600V 11.5A 5DFN
4.374
DTMOSIV
N-Channel
MOSFET (Metal Oxide)
600V
11.5A (Ta)
10V
300mOhm @ 5.8A, 10V
3.7V @ 600µA
25nC @ 10V
±30V
890pF @ 300V
Super Junction
104W (Tc)
150°C (TJ)
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TK16V60W,LVQ
Toshiba Semiconductor and Storage
MOSFET N CH 600V 15.8A 5DFN
4.644
DTMOSIV
N-Channel
MOSFET (Metal Oxide)
600V
15.8A (Ta)
10V
190mOhm @ 7.9A, 10V
3.7V @ 790µA
38nC @ 10V
±30V
1350pF @ 300V
Super Junction
139W (Tc)
150°C (TJ)
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TK46A08N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 46A TO-220
3.582
U-MOSVIII-H
N-Channel
MOSFET (Metal Oxide)
80V
46A (Tc)
10V
8.4mOhm @ 23A, 10V
4V @ 500µA
37nC @ 10V
±20V
2500pF @ 40V
-
35W (Tc)
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPCF8107,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 6A VS-8
5.004
U-MOSVI
P-Channel
MOSFET (Metal Oxide)
30V
6A (Ta)
4.5V, 10V
28mOhm @ 3A, 10V
2V @ 100µA
22nC @ 10V
+20V, -25V
970pF @ 10V
-
700mW (Ta)
150°C (TJ)
Surface Mount
VS-8 (2.9x1.5)
8-SMD, Flat Lead
TK17E65W,S1X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 17.3A TO-220AB
8.064
DTMOSIV
N-Channel
MOSFET (Metal Oxide)
650V
17.3A (Ta)
10V
200mOhm @ 8.7A, 10V
3.5V @ 900µA
45nC @ 10V
±30V
1800pF @ 300V
-
165W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
TK16E60W5,S1VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO-220AB
3.436
DTMOSIV
N-Channel
MOSFET (Metal Oxide)
600V
15.8A (Ta)
10V
230mOhm @ 7.9A, 10V
4.5V @ 790µA
43nC @ 10V
±30V
1350pF @ 300V
-
130W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
SSM3K17SU,LF(D
Toshiba Semiconductor and Storage
MOSFET N-CH 50V 100MA USM
6.336
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SJ438(AISIN,A,Q)
Toshiba Semiconductor and Storage
MOSFET P-CH
8.640
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438(AISIN,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH
7.974
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438(CANO,A,Q)
Toshiba Semiconductor and Storage
MOSFET P-CH
8.622
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438(CANO,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH
4.644
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438,MDKQ(J
Toshiba Semiconductor and Storage
MOSFET P-CH
3.024
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438,MDKQ(M
Toshiba Semiconductor and Storage
MOSFET P-CH
4.824
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438,Q(J
Toshiba Semiconductor and Storage
MOSFET P-CH
5.364
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SJ438,Q(M
Toshiba Semiconductor and Storage
MOSFET P-CH
6.264
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-220NIS
TO-220-3 Full Pack
2SK2962(T6CANO,A,F
Toshiba Semiconductor and Storage
MOSFET N-CH
4.950
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962(T6CANO,F,M
Toshiba Semiconductor and Storage
MOSFET N-CH
3.096
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962(TE6,F,M)
Toshiba Semiconductor and Storage
MOSFET N-CH
2.412
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962,F(J
Toshiba Semiconductor and Storage
MOSFET N-CH
7.650
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962,T6F(J
Toshiba Semiconductor and Storage
MOSFET N-CH
6.660
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962,T6F(M
Toshiba Semiconductor and Storage
MOSFET N-CH
5.670
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(J
Toshiba Semiconductor and Storage
MOSFET N-CH
6.948
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(M
Toshiba Semiconductor and Storage
MOSFET N-CH
5.778
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,A,F
Toshiba Semiconductor and Storage
MOSFET N-CH
2.862
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,F,M
Toshiba Semiconductor and Storage
MOSFET N-CH
5.688
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2989(TPE6,F,M)
Toshiba Semiconductor and Storage
MOSFET N-CH
8.838
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2989,F(J
Toshiba Semiconductor and Storage
MOSFET N-CH
4.986
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK2989,T6F(J
Toshiba Semiconductor and Storage
MOSFET N-CH
5.076
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body
2SK3670(F,M)
Toshiba Semiconductor and Storage
MOSFET N-CH
5.796
*
-
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body