Central Semiconductor Corp Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerCentral Semiconductor Corp
Datensätze 80
Seite 3/3
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Central Semiconductor Corp |
MOSFET N-CH 30V SOT-23F |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 2.5V, 4.5V | 40mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 12V | 590pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 60V DFN6 |
3.042 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.592nC @ 4.5V | 40V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 60V DFN6 |
6.444 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.592nC @ 4.5V | 40V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
7.758 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.764nC @ 4.5V | 12V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
8.874 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.764nC @ 4.5V | 12V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 20V DFN6 |
5.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 8V | 220pF @ 10V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
2.484 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
3.276 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
3.528 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
4.644 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET P-CH 20V DFN6 |
6.804 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 950mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET P-CH 20V DFN6 |
4.266 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 950mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Central Semiconductor Corp |
MOSFET N-CH 100V 3A SOT-223 |
8.208 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 10V | 150mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 20V | 975pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
7.938 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.184 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.238 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET P-CH 30V |
8.352 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Central Semiconductor Corp |
MOSFET P-CH 30V |
2.916 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |