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Global Power Technologies Group Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerGlobal Power Technologies Group
Datensätze 133
Seite 2/5
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
GP1M009A070F
Global Power Technologies Group
MOSFET N-CH 700V 9A TO220F
6.408
-
N-Channel
MOSFET (Metal Oxide)
700V
9A (Tc)
10V
1.05Ohm @ 4.5A, 10V
4V @ 250µA
30nC @ 10V
±30V
1944pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M009A090H
Global Power Technologies Group
MOSFET N-CH 900V 9A TO220
6.012
-
N-Channel
MOSFET (Metal Oxide)
900V
9A (Tc)
10V
1.4Ohm @ 4.5A, 10V
4V @ 250µA
65nC @ 10V
±30V
2324pF @ 25V
-
290W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M010A060FH
Global Power Technologies Group
MOSFET N-CH 600V 10A TO220F
3.024
-
N-Channel
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
750mOhm @ 5A, 10V
4V @ 250µA
36nC @ 10V
±30V
1891pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M010A080N
Global Power Technologies Group
MOSFET N-CH 900V 10A TO3PN
6.912
-
N-Channel
MOSFET (Metal Oxide)
900V
10A (Tc)
10V
1.05Ohm @ 5A, 10V
4V @ 250µA
53nC @ 10V
±30V
2336pF @ 25V
-
312W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
GP1M011A050FSH
Global Power Technologies Group
MOSFET N-CH 500V 10A TO220F
8.514
-
N-Channel
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
700mOhm @ 5A, 10V
3.5V @ 250µA
28nC @ 10V
±30V
1546pF @ 25V
-
51.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M011A050HS
Global Power Technologies Group
MOSFET N-CH 500V 10A TO220
4.860
-
N-Channel
MOSFET (Metal Oxide)
500V
10A (Tc)
10V
700mOhm @ 5A, 10V
3.5V @ 250µA
28nC @ 10V
±30V
1546pF @ 25V
-
158W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M012A060FH
Global Power Technologies Group
MOSFET N-CH 600V 12A TO220F
7.776
-
N-Channel
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
650mOhm @ 6A, 10V
4V @ 250µA
39nC @ 10V
±30V
2308pF @ 25V
-
53W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M013A050FH
Global Power Technologies Group
MOSFET N-CH 500V 13A TO220F
4.482
-
N-Channel
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
480mOhm @ 6.5A, 10V
4V @ 250µA
36nC @ 10V
±30V
1918pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M015A050H
Global Power Technologies Group
MOSFET N-CH 500V 14A TO220
7.146
-
N-Channel
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
440mOhm @ 7A, 10V
4V @ 250µA
39nC @ 10V
±30V
2263pF @ 25V
-
231W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M016A025PG
Global Power Technologies Group
MOSFET N-CH 250V 16A IPAK
3.960
-
N-Channel
MOSFET (Metal Oxide)
250V
16A (Tc)
10V
240mOhm @ 8A, 10V
5V @ 250µA
19nC @ 10V
±30V
944pF @ 25V
-
93.9W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP1M016A060FH
Global Power Technologies Group
MOSFET N-CH 600V 16A TO220F
6.768
-
N-Channel
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
470mOhm @ 8A, 10V
4V @ 250µA
53nC @ 10V
±30V
3039pF @ 25V
-
48W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP1M018A020CG
Global Power Technologies Group
MOSFET N-CH 200V 18A DPAK
2.988
-
N-Channel
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
170mOhm @ 9A, 10V
5V @ 250µA
18nC @ 10V
±30V
950pF @ 25V
-
94W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP1M018A020FG
Global Power Technologies Group
MOSFET N-CH 200V 18A TO220F
3.690
-
N-Channel
MOSFET (Metal Oxide)
200V
18A (Tc)
10V
170mOhm @ 9A, 10V
5V @ 250µA
18nC @ 10V
±30V
950pF @ 25V
-
30.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP1M020A060M
Global Power Technologies Group
MOSFET N-CH 600V 20A TO3P
4.680
-
N-Channel
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
330mOhm @ 10A, 10V
4V @ 250µA
76nC @ 10V
±30V
2097pF @ 25V
-
347W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
GP1M020A060N
Global Power Technologies Group
MOSFET N-CH 600V 20A TO3PN
6.138
-
N-Channel
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
330mOhm @ 10A, 10V
4V @ 250µA
76nC @ 10V
±30V
2097pF @ 25V
-
347W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
GP2M002A060CG
Global Power Technologies Group
MOSFET N-CH 600V 2A DPAK
4.068
-
N-Channel
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4Ohm @ 1A, 10V
5V @ 250µA
9nC @ 10V
±30V
360pF @ 25V
-
52.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP2M002A060HG
Global Power Technologies Group
MOSFET N-CH 600V 2A TO220
3.240
-
N-Channel
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4Ohm @ 1A, 10V
5V @ 250µA
9nC @ 10V
±30V
360pF @ 25V
-
52.1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M002A060PG
Global Power Technologies Group
MOSFET N-CH 600V 2A
2.070
-
N-Channel
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4Ohm @ 1A, 10V
5V @ 250µA
9nC @ 10V
±30V
360pF @ 25V
-
52.1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP2M002A065CG
Global Power Technologies Group
MOSFET N-CH 650V 1.8A DPAK
5.076
-
N-Channel
MOSFET (Metal Oxide)
650V
1.8A (Tc)
10V
4.6Ohm @ 900mA, 10V
5V @ 250µA
8.5nC @ 10V
±30V
353pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP2M002A065FG
Global Power Technologies Group
MOSFET N-CH 650V 1.8A TO220F
5.040
-
N-Channel
MOSFET (Metal Oxide)
650V
1.8A (Tc)
10V
4.6Ohm @ 900mA, 10V
5V @ 250µA
8.5nC @ 10V
±30V
353pF @ 25V
-
17.3W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M002A065HG
Global Power Technologies Group
MOSFET N-CH 650V 1.8A TO220
2.610
-
N-Channel
MOSFET (Metal Oxide)
650V
1.8A (Tc)
10V
4.6Ohm @ 900mA, 10V
5V @ 250µA
8.5nC @ 10V
±30V
353pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M002A065PG
Global Power Technologies Group
MOSFET N-CH 650V 1.8A IPAK
4.284
-
N-Channel
MOSFET (Metal Oxide)
650V
1.8A (Tc)
10V
4.6Ohm @ 900mA, 10V
5V @ 250µA
8.5nC @ 10V
±30V
353pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP2M004A060CG
Global Power Technologies Group
MOSFET N-CH 600V 4A DPAK
8.586
-
N-Channel
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
2.5Ohm @ 2A, 10V
5V @ 250µA
12nC @ 10V
±30V
545pF @ 25V
-
86.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP2M004A060FG
Global Power Technologies Group
MOSFET N-CH 600V 4A TO220F
7.686
-
N-Channel
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
2.5Ohm @ 2A, 10V
5V @ 250µA
12nC @ 10V
±30V
545pF @ 25V
-
30.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M004A060HG
Global Power Technologies Group
MOSFET N-CH 600V 4A TO220
3.472
-
N-Channel
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
2.5Ohm @ 2A, 10V
5V @ 250µA
12nC @ 10V
±30V
545pF @ 25V
-
86.2W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M004A065CG
Global Power Technologies Group
MOSFET N-CH 650V 4A DPAK
5.094
-
N-Channel
MOSFET (Metal Oxide)
650V
4A (Tc)
10V
2.4Ohm @ 2A, 10V
5V @ 250µA
15nC @ 10V
±30V
642pF @ 25V
-
98.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
GP2M004A065HG
Global Power Technologies Group
MOSFET N-CH 650V 4A TO220
2.718
-
N-Channel
MOSFET (Metal Oxide)
650V
4A (Tc)
10V
2.4Ohm @ 2A, 10V
5V @ 250µA
15nC @ 10V
±30V
642pF @ 25V
-
98.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M005A050FG
Global Power Technologies Group
MOSFET N-CH 500V 4.5A TO220F
8.928
-
N-Channel
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
1.5Ohm @ 2.25A, 10V
5V @ 250µA
15nC @ 10V
±30V
645pF @ 25V
-
32.9W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M005A050HG
Global Power Technologies Group
MOSFET N-CH 500V 4.5A TO220
4.572
-
N-Channel
MOSFET (Metal Oxide)
500V
4.5A (Tc)
10V
1.5Ohm @ 2.25A, 10V
5V @ 250µA
15nC @ 10V
±30V
645pF @ 25V
-
98.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M005A060PG
Global Power Technologies Group
MOSFET N-CH 600V 4.2A IPAK
2.448
-
N-Channel
MOSFET (Metal Oxide)
600V
4.2A (Tc)
10V
2.1Ohm @ 2.1A, 10V
5V @ 250µA
14nC @ 10V
±30V
658pF @ 25V
-
98.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA