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Global Power Technologies Group Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerGlobal Power Technologies Group
Datensätze 133
Seite 5/5
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
GP2M005A060PGH
Global Power Technologies Group
MOSFET N-CH 600V 4.2A IPAK
7.992
-
N-Channel
MOSFET (Metal Oxide)
600V
4.2A (Tc)
10V
2.1Ohm @ 2.1A, 10V
5V @ 250µA
14nC @ 10V
±30V
658pF @ 25V
-
98.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP2M007A080F
Global Power Technologies Group
MOSFET N-CH 800V 7A TO220F
5.490
-
N-Channel
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
1.9Ohm @ 3.5A, 10V
4V @ 250µA
38nC @ 10V
±30V
1410pF @ 25V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M008A060FGH
Global Power Technologies Group
MOSFET N-CH 600V 7.5A TO220F
4.716
-
N-Channel
MOSFET (Metal Oxide)
600V
7.5A (Tc)
10V
1.2Ohm @ 3.75A, 10V
5V @ 250µA
23nC @ 10V
±30V
1063pF @ 25V
-
39W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M008A060PGH
Global Power Technologies Group
MOSFET N-CH 600V 7.5A IPAK
2.808
-
N-Channel
MOSFET (Metal Oxide)
600V
7.5A (Tc)
10V
1.2Ohm @ 3.75A, 10V
5V @ 250µA
23nC @ 10V
±30V
1063pF @ 25V
-
120W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
I-PAK
TO-251-3 Short Leads, IPak, TO-251AA
GP2M010A060F
Global Power Technologies Group
MOSFET N-CH 600V 10A TO220F
8.946
-
N-Channel
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
700mOhm @ 5A, 10V
5V @ 250µA
35nC @ 10V
±30V
1660pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M010A065F
Global Power Technologies Group
MOSFET N-CH 650V 9.5A TO220F
2.646
-
N-Channel
MOSFET (Metal Oxide)
650V
9.5A (Tc)
10V
820mOhm @ 4.75A, 10V
5V @ 250µA
36nC @ 10V
±30V
1670pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M010A065H
Global Power Technologies Group
MOSFET N-CH 650V 9.5A TO220
4.086
-
N-Channel
MOSFET (Metal Oxide)
650V
9.5A (Tc)
10V
820mOhm @ 4.75A, 10V
5V @ 250µA
36nC @ 10V
±30V
1670pF @ 25V
-
198W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M011A090NG
Global Power Technologies Group
MOSFET N-CH 900V 11A TO3PN
7.668
-
N-Channel
MOSFET (Metal Oxide)
900V
11A (Tc)
10V
900mOhm @ 5.5A, 10V
5V @ 250µA
84nC @ 10V
±30V
3240pF @ 25V
-
416W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
GP2M012A060F
Global Power Technologies Group
MOSFET N-CH 600V 12A TO220F
2.826
-
N-Channel
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
650mOhm @ 6A, 10V
5V @ 250µA
40nC @ 10V
±30V
1890pF @ 25V
-
53.4W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M012A080NG
Global Power Technologies Group
MOSFET N-CH 800V 12A TO3PN
7.254
-
N-Channel
MOSFET (Metal Oxide)
800V
12A (Tc)
10V
650mOhm @ 6A, 10V
5V @ 250µA
79nC @ 10V
±30V
3370pF @ 25V
-
416W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
GP2M013A050F
Global Power Technologies Group
MOSFET N-CH 500V 13A TO220F
4.302
-
N-Channel
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
480mOhm @ 6.5A, 10V
5V @ 250µA
35nC @ 10V
±30V
1798pF @ 25V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
GP2M020A050H
Global Power Technologies Group
MOSFET N-CH 500V 18A TO220
4.122
-
N-Channel
MOSFET (Metal Oxide)
500V
18A (Tc)
10V
300mOhm @ 9A, 10V
5V @ 250µA
44nC @ 10V
±30V
2880pF @ 25V
-
290W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
GP2M020A060N
Global Power Technologies Group
MOSFET N-CH 600V 20A TO3PN
5.832
-
N-Channel
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
330mOhm @ 10A, 10V
5V @ 250µA
70nC @ 10V
±30V
3184pF @ 25V
-
347W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3