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Millionen elektronischer Teile auf Lager. Preis- und Vorlaufzeitangebote innerhalb von 24 Stunden.

Microsemi Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerMicrosemi Corporation
Datensätze 2.560
Seite 2/86
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
CDLL5819
Microsemi
DIODE SCHOTTKY 45V 1A DO213AB
6.552
-
Schottky
45V
1A
490mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-65°C ~ 125°C
1N5809
Microsemi
DIODE GEN PURP 100V 3A AXIAL
176
-
Standard
100V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5802US
Microsemi
DIODE GEN PURP 50V 1A D5A
6.210
-
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
1N3595US
Microsemi
DIODE GEN PURP 4A B-MELF
6.564
-
Standard
-
4A (DC)
1V @ 200mA
Standard Recovery >500ns, > 200mA (Io)
3µs
1nA @ 125V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 150°C
MSC030SDA120B
Microsemi
DIODE SCHOTTKY 1.2KV 30A TO247
7.644
-
Silicon Carbide Schottky
1200V
30A (DC)
1.5V @ 30A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-247-2
TO-247
-
UPS120EE3/TR7
Microsemi
DIODE SCHOTTKY 20V 1A POWERMITE1
25.932
-
Schottky
20V
1A
530mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 125°C
APT30DQ60BG
Microsemi
DIODE GEN PURP 600V 30A TO247
15.276
-
Standard
600V
30A
2.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT30DQ100BG
Microsemi
DIODE GEN PURP 1KV 30A TO247
6.540
-
Standard
1000V
30A
3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
295ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT30DQ120BG
Microsemi
DIODE GEN PURP 1.2KV 30A TO247
7.260
-
Standard
1200V
30A
3.3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
320ns
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT40DQ100BG
Microsemi
DIODE GEN PURP 1KV 40A TO247
88.380
-
Standard
1000V
40A
3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT60DQ60BG
Microsemi
DIODE GEN PURP 600V 60A TO247
6.912
-
Standard
600V
60A
2.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT60D40BG
Microsemi
DIODE GEN PURP 400V 60A TO247
6.318
-
Standard
400V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
37ns
250µA @ 400V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N4938-1
Microsemi
DIODE GEN PURP 175V 100MA DO35
7.260
-
Standard
175V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 175V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
APT75DQ60BG
Microsemi
DIODE GEN PURP 600V 75A TO247
14.460
-
Standard
600V
75A
2.5V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
31ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N5617
Microsemi
DIODE GEN PURP 400V 1A AXIAL
6.312
-
Standard
400V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 400V
35pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N5614US
Microsemi
DIODE GEN PURP 200V 1A D5A
6.444
-
Standard
200V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 200V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
1N5617US
Microsemi
DIODE GEN PURP 400V 1A D5A
7.284
-
Standard
400V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 400V
35pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
1N5711-1
Microsemi
DIODE SCHOTTKY 70V 33MA DO35
84
-
Schottky
70V
33mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 150°C
1N5802
Microsemi
DIODE GEN PURP 50V 1A AXIAL
7.932
-
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N5554
Microsemi
DIODE GEN PURP 1KV 3A AXIAL
15
-
Standard
1000V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
CDLL5711
Microsemi
DIODE SCHOTTKY 50V 33MA DO213AA
8.220
-
Schottky
50V
33mA
410mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 150°C
1N5416
Microsemi
DIODE GEN PURP 100V 3A AXIAL
9.084
-
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5618US
Microsemi
DIODE GEN PURP 600V 1A D5A
9.720
-
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
1N5807
Microsemi
DIODE GEN PURP 50V 3A AXIAL
8.226
-
Standard
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5554US
Microsemi
DIODE GEN PURP 1KV 3A B-MELF
9.792
-
Standard
1000V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N6628US
Microsemi
DIODE GEN PURP 660V 1.75A A-MELF
6.492
-
Standard
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
MSC010SDA070K
Microsemi
DIODE SCHOTTKY 700V 10A TO220-3
8.910
-
Silicon Carbide Schottky
700V
10A (DC)
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-220-3
TO-220-3
-
MSC010SDA120K
Microsemi
DIODE SCHOTTKY 1.2KV 10A TO220-2
6.624
-
Silicon Carbide Schottky
1200V
10A (DC)
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-220-2
TO-220 [K]
-
MSC015SDA120B
Microsemi
DIODE SCHOTTKY 1.2KV 15A TO247
8.406
-
Silicon Carbide Schottky
1200V
15A (DC)
1.5V @ 15A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-247-2
TO-247
-
MSC030SDA070K
Microsemi
DIODE SCHOTTKY 700V 30A TO220-3
7.056
-
Silicon Carbide Schottky
700V
30A (DC)
1.5V @ 30A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-220-3
TO-220-3
-