Microsemi Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerMicrosemi Corporation
Datensätze 2.560
Seite 3/86
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE1 |
8.226 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 60pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE1 |
4.932 |
|
- | Schottky | 40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | 70pF @ 5V, 1MHz | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2.5A DO216 |
8.172 |
|
- | Standard | 100V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Surface Mount | DO-216AA | DO-216 | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 5A POWERMITE3 |
7.200 |
|
- | Schottky | 40V | 5A | 540mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 250pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 1A DO214AA |
8.856 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 7A POWERMITE3 |
8.928 |
|
- | Schottky | 60V | 7A | 600mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 375pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
14.880 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 3A POWERMITE3 |
2.034 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 100V 3A POWERMITE |
2.952 |
|
- | Schottky | 100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 85pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 5A DO214AB |
6.156 |
|
- | Schottky | 60V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 2A POWERMITE |
20.861 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
6.204 |
|
- | Standard | 50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 35V 8A POWERMITE3 |
4.482 |
|
- | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 4A DO213AA |
32.244 |
|
Military, MIL-PRF-19500/144 | Standard | 50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 40V 8A POWERMITE |
7.524 |
|
- | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO220 |
19.176 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | - |
|
|
|
Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
8.328 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
13.272 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6.642 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
5.304 |
|
Military, MIL-PRF-19500/359 | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8.616 |
|
Military, MIL-PRF-19500/429 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
13.542 |
|
Military, MIL-PRF-19500/429 | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | A-PAK | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO204AL |
1.690 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 6A AXIAL |
3.924 |
|
- | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA D5D |
6.912 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA DO35 |
72.246 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
19.272 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
8.010 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA D5B |
909 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 125V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
289 |
|
Military, MIL-PRF-19500/411 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |