Rohm Semiconductor Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRohm Semiconductor
Datensätze 814
Seite 28/28
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
MOSFET N-CH 60V 5.5A MPT6 |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.5A (Ta) | 4V, 10V | 49mOhm @ 5.5A, 10V | 3V @ 1mA | 14nC @ 10V | ±20V | 730pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 60V 8A MPT6 |
4.680 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 24mOhm @ 8A, 10V | 3V @ 1mA | 40nC @ 10V | ±20V | 1700pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TUMT6 |
4.266 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | -8V | 4200pF @ 6V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC |
7.110 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 14mOhm @ 9A, 10V | 2.5V @ 1mA | 39nC @ 5V | ±20V | 4000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |