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Transistoren - FETs, MOSFETs - Arrays

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
Datensätze 3.829
Seite 128/128
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
FET-Funktion
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Eingangskapazität (Ciss) (Max) @ Vds
Leistung - max
Betriebstemperatur
Montagetyp
Paket / Fall
Lieferantengerätepaket
UPA2384T1P-E1-A
Renesas Electronics America
MOSFET N-CH DUAL LGA
4.392
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UPA2386T1P-E1-A
Renesas Electronics America
MOSFET N-CH DUAL LGA
4.248
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UPA2390T1P-E4-A
Renesas Electronics America
MOSFET N-CH DUAL LGA
5.706
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UPA672CT-T1-AT
Renesas Electronics America
MOSFET N-CH SC-88
4.770
-
2 N-Channel (Dual), Schottky
Logic Level Gate, 4.5V Drive
60V
100mA (Ta)
2.7Ohm @ 100mA, 10V
2.5V @ 250µA
2nC @ 10V
20pF @ 10V
200mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
4.734
*
-
-
-
-
-
-
-
-
-
-
-
-
-
2N7002DW-7-F-79
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
8.784
*
-
-
-
-
-
-
-
-
-
-
-
-
-
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
2.340
*
-
-
-
-
-
-
-
-
-
-
-
-
-
2N7002DWKX-13
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
7.992
*
-
-
-
-
-
-
-
-
-
-
-
-
-
2N7002DWKX-7
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
3.436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
DMN5L06VK-7-G
Diodes Incorporated
MOSFET N-CH SOT23
4.230
*
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP2160UFDB-7R
Diodes Incorporated
MOSFET P-CH SOT23
5.472
*
-
-
-
-
-
-
-
-
-
-
-
-
-
TSM1N45DCS RL
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL
8.226
-
2 N-Channel (Dual)
Standard
-
500mA (Ta)
4.25Ohm @ 250mA, 10V
4.9V @ 250mA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MCMP06-TP
Micro Commercial Co
MOSFET P+SKY DFN2020-6U
5.778
-
P-Channel
Schottky Diode (Isolated)
20V
2A (Ta)
110mOhm @ 2.8A, 4.5V
1V @ 250µA
7.2nC @ 4.5V
480pF @ 15V
700mW (Ta)
150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
DFN2020-6U
IRF7331TRPBF-1
Infineon Technologies
MOSFET 2N-CH 20V 7A 8-SOIC
6.318
*
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF7904TRPBF-1
Infineon Technologies
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
7.776
*
-
-
-
-
-
-
-
-
-
-
-
-
-
NSTJD4001NT1G
ON Semiconductor
MOSFET P-CH SC88
8.190
*
-
-
-
-
-
-
-
-
-
-
-
-
-
SI9936DY,518
NXP
MOSFET 2N-CH 30V 5A SOT96-1
4.860
TrenchMOS™
2 N-Channel (Dual)
Logic Level Gate
30V
5A
50mOhm @ 5A, 10V
1V @ 250µA
35nC @ 10V
-
900mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
PHN210,118
NXP
MOSFET 2N-CH 30V 8SOIC
6.264
TrenchMOS™
2 N-Channel (Dual)
Logic Level Gate
30V
-
100mOhm @ 2.2A, 10V
2.8V @ 1mA
6nC @ 10V
250pF @ 20V
2W
-65°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BUK7K6R2-40E/CX
NXP
MOSFET 2N-CH 56LFPAK
8.676
*
-
-
-
-
-
-
-
-
-
-
-
-
-