Infineon and VMAX strengthen cooperation to provide energy-efficient and economical fast charging services for electric vehicles

     Infineon Technologies AG's new CoolSiC hybrid discrete devices feature TRENCHSTOP 5 fast-switching IGBTs and CoolSiC Schottky diodes. Shenzhen VMAX New Energy Co., LTD. (VMAX), a leading manufacturer of power electronics and motor drives for new energy vehicles in China, is using this device for its next-generation 6.6kW OBC/DCDC on-board charger. In a D²PAK package, Infineon's components combine ultra-high speed TRENCHSTOP 5 IGBTs with silicon carbide (SiC) Schottky barrier diodes for a perfect price-performance ratio in hard and soft switching topologies. With superior performance, optimized power density and leading quality, this power semiconductor device is highly compatible with Wilmex car chargers.

     Jinzhu Xu, Product Line Director and Chief Engineer at Wilmetz R&D, said: "We are very pleased to have selected Infineon's CoolSiC Hybrid device for our next generation OBC to achieve greater reliability, stability, performance and power density. This deepens our partnership with Infineon and, through close collaboration, promotes innovation in the application of technology and jointly promotes the flourishing development of new energy vehicles."

     Robert Hermann, Vice President Automotive High Voltage Chips and Discrete Devices Product line at Infineon Technologies, said: "We are pleased to strengthen our collaboration with VMAX with our highly efficient hybrid products. Together, we will continue to drive the development of electric vehicles with efficient solutions that meet the industry's requirements for performance, quality and system cost."

     This hybrid discrete device is co-packaged with a fast hard switch TRENCHSTOP 5 650 V IGBT and a zero reverse recovery CoolSiC Schottky diode for extremely low switching losses at switching speeds above 50 kHz. This makes the device an excellent choice for high-power electric vehicle charging systems. In addition, the rugged 5th generation CoolSiC Schottky diode offers increased resistance to inrush current, maximizing reliability. Diffusion welding of the SiC diode improves the thermal resistance (Rth) of the package, resulting in a smaller chip size, which improves the power switching capability. With these features, the product achieves superior system reliability and service life, meeting the stringent requirements of the automotive industry. To maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.