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Micron begins mass production of industry-leading HBM3E solutions to accelerate AI development

Mär 7 2024 2024-03 Power Micron Technology Inc.
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Micron Technology, a leading global provider of memory and storage solutions, announced that it has begun mass production of its HBM3E high-bandwidth memory solution. The NVIDIA H200 Tensor Core GPU will feature Micron's 8-layer stacked 24GB capacity HBM3E memory and begin shipping in the second quarter of 2024.

     Micron Technology, a leading global provider of memory and storage solutions, announced that it has begun mass production of its HBM3E high-bandwidth memory solution. The NVIDIA H200 Tensor Core GPU will feature Micron's 8-layer stacked 24GB capacity HBM3E memory and begin shipping in the second quarter of 2024. With this milestone, Micron continues to lead the industry and enables artificial intelligence (AI) solutions with the exceptional performance and energy efficiency of HBM3E.

     As the demand for AI continues to surge, in-memory solutions are critical to meeting the increased workload demands. The Micron HBM3E solution addresses this challenge with the following advantages:

     Superior performance: The Micron HBM3E has a pin rate of more than 9.2Gb/s and provides more than 1.2TB/s of memory bandwidth to enable ultra-fast data access in AI accelerators, supercomputers and data centers.

     Excellent energy efficiency: The Micron HBM3E consumes approximately 30% less power than competing products, leading the industry. To support growing AI needs and use cases, HBM3E delivers greater throughput with lower power consumption, improving key data center operating expenditure metrics.

     Seamless scalability: Micron HBM3E currently offers 24 GB of capacity, enabling data centers to seamlessly scale their AI applications. Whether used to train massive neural networks or accelerate inference tasks, Micron's solutions provide the necessary memory bandwidth.

     Sumit Sadana, Executive vice president and Chief Commercial Officer of Micron, said: "With this landmark product, Micron has achieved three major accomplishments: industry-leading time to market, industry-leading performance and superior energy efficiency. Ai workloads are heavily dependent on memory bandwidth and capacity. "Micron's industry-leading HBM3E and HBM4 product roadmaps, as well as a complete suite of DRAM and NAND solutions for AI applications, are well positioned to drive the future growth of AI."

     Micron developed the industry-leading HBM3E design using its 1beta (1-beta) technology, advanced through-silicon (TSV) and other innovations that enable differentiated packaging solutions. Micron, a longtime storage leader in 2.5D/3D stacking and advanced packaging technologies, is honored to be a partner member of TSMC's 3Dfabric Alliance to build the future of semiconductor and systems innovation.

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