Advanced Linear Devices Inc. Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
HerstellerAdvanced Linear Devices Inc.
Datensätze 125
Seite 4/5
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
5.148 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
3.150 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10V 16DIP |
7.758 |
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EPAD® | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10V 16SOIC |
7.830 |
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EPAD® | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
8.784 |
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- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
5.238 |
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- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 40mA | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7.848 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5.724 |
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EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
7.218 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
8.982 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
6.300 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
4.266 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
7.164 |
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EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
7.362 |
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EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
7.632 |
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EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
3.276 |
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EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
5.994 |
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EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
6.966 |
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- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP |
8.964 |
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- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
5.760 |
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EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
5.058 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
6.066 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
2.448 |
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EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10V 8DIP |
2.502 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10V 8SOIC |
3.978 |
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EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5.130 |
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EPAD® | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
4.482 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
3.562 |
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EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
2.520 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
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Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
2.790 |
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- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |