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Microsemi Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 3/21
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
APT20M38SVRG
Microsemi
MOSFET N-CH 200V 67A D3PAK
2.178
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
200V
67A (Tc)
10V
38mOhm @ 500mA, 10V
4V @ 1mA
225nC @ 10V
±30V
6120pF @ 25V
-
370W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D3 [S]
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT106N60B2C6
Microsemi
MOSFET N-CH 600V 106A TO-247
7.146
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
600V
106A (Tc)
10V
35mOhm @ 53A, 10V
3.5V @ 3.4mA
308nC @ 10V
±20V
8390pF @ 25V
-
833W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT5010LLLG
Microsemi
MOSFET N-CH 500V 46A TO-264
4.392
POWER MOS 7®
N-Channel
MOSFET (Metal Oxide)
500V
46A (Tc)
10V
100mOhm @ 23A, 10V
5V @ 2.5mA
95nC @ 10V
±30V
4360pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT31M100L
Microsemi
MOSFET N-CH 1000V 32A TO264
6.336
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
1000V
32A (Tc)
10V
400mOhm @ 16A, 10V
5V @ 2.5mA
260nC @ 10V
±30V
8500pF @ 25V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
APT38F80L
Microsemi
MOSFET N-CH 800V 41A TO-264
8.514
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
800V
41A (Tc)
10V
240mOhm @ 20A, 10V
5V @ 2.5mA
260nC @ 10V
±30V
8070pF @ 25V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT48M80L
Microsemi
MOSFET N-CH 800V 48A TO-264
7.686
-
N-Channel
MOSFET (Metal Oxide)
800V
49A (Tc)
10V
200mOhm @ 24A, 10V
5V @ 2.5mA
305nC @ 10V
±30V
9330pF @ 25V
-
1135W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT36N90BC3G
Microsemi
MOSFET N-CH 900V 36A TO-247
3.834
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
900V
36A (Tc)
10V
120mOhm @ 18A, 10V
3.5V @ 2.9mA
252nC @ 10V
±20V
7463pF @ 25V
Super Junction
390W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT28M120B2
Microsemi
MOSFET N-CH 1200V 29A T-MAX
3.762
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
1200V
29A (Tc)
10V
560mOhm @ 14A, 10V
5V @ 2.5mA
300nC @ 10V
±30V
9670pF @ 25V
-
1135W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT10045JLL
Microsemi
MOSFET N-CH 1000V 21A SOT-227
3.618
POWER MOS 7®
N-Channel
MOSFET (Metal Oxide)
1000V
21A (Tc)
10V
450mOhm @ 11.5A, 10V
5V @ 2.5mA
154nC @ 10V
±30V
4350pF @ 25V
-
460W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT60M60JFLL
Microsemi
MOSFET N-CH 600V 70A SOT-227
6.966
POWER MOS 7®
N-Channel
MOSFET (Metal Oxide)
600V
70A (Tc)
10V
60mOhm @ 35A, 10V
5V @ 5mA
289nC @ 10V
±30V
12630pF @ 25V
-
694W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT37F50B
Microsemi
MOSFET N-CH 500V 37A TO-247
5.976
-
N-Channel
MOSFET (Metal Oxide)
500V
37A (Tc)
10V
150mOhm @ 18A, 10V
5V @ 1mA
145nC @ 10V
±30V
5710pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT18M80B
Microsemi
MOSFET N-CH 800V 19A TO-247
7.236
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
800V
19A (Tc)
10V
530mOhm @ 9A, 10V
5V @ 1mA
120nC @ 10V
±30V
3760pF @ 25V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT18M100B
Microsemi
MOSFET N-CH 1000V 18A TO-247
6.642
-
N-Channel
MOSFET (Metal Oxide)
1000V
18A (Tc)
10V
700mOhm @ 9A, 10V
5V @ 1mA
150nC @ 10V
±30V
4845pF @ 25V
-
625W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT77N60BC6
Microsemi
MOSFET N-CH 600V 77A TO-247
5.796
CoolMOS™
N-Channel
MOSFET (Metal Oxide)
600V
77A (Tc)
10V
41mOhm @ 44.4A, 10V
3.6V @ 2.96mA
260nC @ 10V
±20V
13600pF @ 25V
Super Junction
481W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
APT75M50L
Microsemi
MOSFET N-CH 500V 75A TO-264
8.370
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
500V
75A (Tc)
10V
75mOhm @ 37A, 10V
5V @ 2.5mA
290nC @ 10V
±30V
11600pF @ 25V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT5010B2FLLG
Microsemi
MOSFET N-CH 500V 46A T-MAX
4.392
POWER MOS 7®
N-Channel
MOSFET (Metal Oxide)
500V
46A (Tc)
10V
100mOhm @ 23A, 10V
5V @ 2.5mA
95nC @ 10V
±30V
4360pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT51F50J
Microsemi
MOSFET N-CH 500V 51A SOT-227
4.212
-
N-Channel
MOSFET (Metal Oxide)
500V
51A (Tc)
10V
75mOhm @ 37A, 10V
5V @ 2.5mA
290nC @ 10V
±30V
11600pF @ 25V
-
480W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT39F60J
Microsemi
MOSFET N-CH 600V 42A SOT-227
6.156
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
110mOhm @ 28A, 10V
5V @ 2.5mA
280nC @ 10V
±30V
11300pF @ 25V
-
480W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M11JVRU3
Microsemi
MOSFET N-CH 100V 142A SOT227
4.716
-
N-Channel
MOSFET (Metal Oxide)
100V
142A (Tc)
10V
11mOhm @ 71A, 10V
4V @ 2.5mA
300nC @ 10V
±30V
8600pF @ 25V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT25M100J
Microsemi
MOSFET N-CH 1000V 25A SOT-227
4.122
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
1000V
25A (Tc)
10V
330mOhm @ 18A, 10V
5V @ 2.5mA
305nC @ 10V
±30V
9835pF @ 25V
-
545W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT17F120J
Microsemi
MOSFET N-CH 1200V 18A SOT-227
3.472
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
1200V
18A (Tc)
10V
580mOhm @ 14A, 10V
5V @ 2.5mA
300nC @ 10V
±30V
9670pF @ 25V
-
545W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT40N60JCU2
Microsemi
MOSFET N-CH 600V 40A SOT-227
5.796
-
N-Channel
MOSFET (Metal Oxide)
600V
40A (Tc)
10V
70mOhm @ 20A, 10V
3.9V @ 1mA
259nC @ 10V
±20V
7015pF @ 25V
-
290W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT58M80J
Microsemi
MOSFET N-CH 800V 58A SOT-227
6.372
-
N-Channel
MOSFET (Metal Oxide)
800V
60A
10V
110mOhm @ 43A, 10V
5V @ 5mA
570nC @ 10V
±30V
17550pF @ 25V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT34M120J
Microsemi
MOSFET N-CH 1200V 34A SOT-227
3.816
-
N-Channel
MOSFET (Metal Oxide)
1200V
35A (Tc)
10V
300mOhm @ 25A, 10V
5V @ 2.5mA
560nC @ 10V
±30V
18200pF @ 25V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT10021JLL
Microsemi
MOSFET N-CH 1000V 37A SOT-227
8.874
POWER MOS 7®
N-Channel
MOSFET (Metal Oxide)
1000V
37A (Tc)
10V
210mOhm @ 18.5A, 10V
5V @ 5mA
395nC @ 10V
±30V
9750pF @ 25V
-
694W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
MSC280SMA120B
Microsemi
GEN2 SIC MOSFET 1200V 280MOHM TO
4.266
-
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
9.4A (Tc)
20V
350mOhm @ 5A, 20V
2.8V @ 1mA
20nC @ 20V
+25V, -10V
300pF @ 1000V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
MSC280SMA120S
Microsemi
GEN2 SIC MOSFET 1200V 280MOHM D3
2.952
-
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MSC140SMA120B
Microsemi
MOSFET 1200V 25A TO-247
4.176
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MSC080SMA120J
Microsemi
GEN2 SIC MOSFET 1200V 80MOHM SOT
3.114
-
N-Channel
SiC (Silicon Carbide Junction Transistor)
1.2kV
35A
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
MSC015SMA070S
Microsemi
GEN2 SIC MOSFET 700V 15MOHM D3PA
7.542
-
N-Channel
SiC (Silicon Carbide Junction Transistor)
700V
166A
-
-
-
-
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA