Renesas Electronics America Transistoren - FETs, MOSFETs - Single

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FET-Typ

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Technologie

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Drain to Source Voltage (Vdss)

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Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.

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Antriebsspannung (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Eingangskapazität (Ciss) (Max) @ Vds

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FET-Funktion

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Verlustleistung (max.)

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Betriebstemperatur

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Montagetyp

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Lieferantengerätepaket

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Paket / Fall

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single

HerstellerRenesas Electronics America

Datensätze 485

Seite 15/17

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	FET-Typ	Technologie	Drain to Source Voltage (Vdss)	Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.	Antriebsspannung (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	FET-Funktion	Verlustleistung (max.)	Betriebstemperatur	Montagetyp	Lieferantengerätepaket	Paket / Fall
UPA1763G(0)-E1-AY	Renesas Electronics America	TRANSISTOR	5.670	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1763G(0)-E2-AT	Renesas Electronics America	TRANSISTOR	7.290	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1763G-E1-A	Renesas Electronics America	TRANSISTOR	6.192	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1763G-E2-A	Renesas Electronics America	TRANSISTOR	2.952	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1770G-E1-A	Renesas Electronics America	TRANSISTOR	4.284	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA1902TE-T1-A	Renesas Electronics America	TRANSISTOR	3.852	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2394T1P-E1-A	Renesas Electronics America	TRANSISTOR	8.370	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2396T1P-E1-A	Renesas Electronics America	TRANSISTOR	3.942	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2706GR-E1-A	Renesas Electronics America	TRANSISTOR	3.294	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2714GR(0)-E1-A	Renesas Electronics America	TRANSISTOR	6.426	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2752GR(1)-E1-A	Renesas Electronics America	TRANSISTOR	3.186	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2752GR-E1-AT	Renesas Electronics America	TRANSISTOR	3.942	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2754GR(0)-E1-AY	Renesas Electronics America	TRANSISTOR	3.438	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2770GR(0)-E1-AY	Renesas Electronics America	TRANSISTOR	2.070	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2782GR-E1-A	Renesas Electronics America	TRANSISTOR	5.544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2792GR(0)-E1-AZ	Renesas Electronics America	TRANSISTOR	8.928	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2793GR(0)-E2-AY	Renesas Electronics America	TRANSISTOR	4.230	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2793GR(01)-E2-AY	Renesas Electronics America	TRANSISTOR	6.066	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2794GR(0)-E1-AZ	Renesas Electronics America	TRANSISTOR	2.934	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ690-T1B-AT	Renesas Electronics America	MOSFET P-CH 30V TSMT	7.812	-	P-Channel	MOSFET (Metal Oxide)	30V	2.5A (Ta)	2.5V, 4.5V	119mOhm @ 1A, 4.5V	1.5V @ 1mA	5.2nC @ 4.5V	±12V	450pF @ 10V	-	200mW (Ta)	150°C	Surface Mount	SC-96-3, Thin Mini Mold	SC-96
2SK3408-T1B-AT	Renesas Electronics America	TRANS N-CH CMPAK-4	5.328	-	N-Channel	MOSFET (Metal Oxide)	43V	1A (Ta)	4V, 10V	195mOhm @ 500mA, 10V	2.5V @ 1mA	4nC @ 10V	±20V	230pF @ 10V	-	200mW (Ta)	150°C	Surface Mount	SC-96-3, Thin Mini Mold	SC-96
H5N2007LSTL-E	Renesas Electronics America	MOSFET N-CH HS SW TO-263	2.718	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
H5N2307LSTL-E	Renesas Electronics America	MOSFET N-CH HS SW TO-263	7.956	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HAT1047RWS-E	Renesas Electronics America	MOSFET P-CH SOP8	7.776	-	P-Channel	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	12mOhm @ 7A, 10V	2.5V @ 1mA	64nC @ 10V	±20V	3500pF @ 10V	-	2.5W (Ta)	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HAT1069C-EL-E	Renesas Electronics America	MOSFET P-CH SMD	7.254	-	P-Channel	MOSFET (Metal Oxide)	12V	4A (Ta)	1.8V, 4.5V	52mOhm @ 1.5A, 4.5V	1.2V @ 1mA	16nC @ 4.5V	±8V	1380pF @ 10V	-	900mW (Ta)	150°C	Surface Mount	6-CMFPAK	6-SMD, Flat Leads
HAT1127HWS-E	Renesas Electronics America	MOSFET P-CH SOP8	3.436	-	P-Channel	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	4.5mOhm @ 20A, 10V	2.5V @ 1mA	125nC @ 10V	+10V, -20V	5600pF @ 10V	-	30W (Tc)	150°C	Surface Mount	5-LFPAK	SC-100, SOT-669
HAT2033RWS-E	Renesas Electronics America	MOSFET N-CH SOP8	2.088	-	N-Channel	MOSFET (Metal Oxide)	60V	7A (Ta)	4V, 10V	38mOhm @ 4A, 10V	2.2V @ 1mA	-	±20V	740pF @ 10V	-	2.5W (Ta)	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HAT2165HWS-E	Renesas Electronics America	MOSFET N-CH LFPAK-5	5.868	-	N-Channel	MOSFET (Metal Oxide)	30V	55A (Ta)	4.5V, 10V	3.3mOhm @ 27.5A, 10V	2.5V @ 1mA	33nC @ 4.5V	±20V	5180pF @ 10V	-	30W (Tc)	150°C	Surface Mount	5-LFPAK	SC-100, SOT-669
HAT2166HWS-E	Renesas Electronics America	MOSFET N-CH LFPAK-5	8.658	-	N-Channel	MOSFET (Metal Oxide)	30V	45A (Ta)	4.5V, 10V	3.8mOhm @ 22.5A, 10V	2.5V @ 1mA	27nC @ 4.5V	±20V	4400pF @ 10V	-	25W (Tc)	150°C	Surface Mount	5-LFPAK	SC-100, SOT-669
HAT2168HWS-E	Renesas Electronics America	MOSFET N-CH LFPAK-5	4.446	-	N-Channel	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	7.9mOhm @ 15A, 10V	2.5V @ 1mA	11nC @ 4.5V	±20V	1730pF @ 10V	-	15W (Tc)	150°C	Surface Mount	5-LFPAK	SC-100, SOT-669

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