Renesas Electronics America Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRenesas Electronics America
Datensätze 485
Seite 17/17
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
MOSFET N-CH |
6.246 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET P-CH UPAK |
5.472 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.7A, 4.5V | 1.4V @ 1mA | 3nC @ 4.5V | +8V, -12V | 330pF @ 10V | - | 1.5W (Ta) | 150°C | Surface Mount | UPAK | TO-243AA |
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Renesas Electronics America |
MOSFET P-CH UPAK |
8.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta) | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | 1.4V @ 1mA | 5nC @ 4.5V | ±12V | 470pF @ 10V | - | 1.5W (Ta) | 150°C | Surface Mount | UPAK | TO-243AA |
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Renesas Electronics America |
MOSFET P-CH |
7.524 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET P-CH SC-95 |
6.912 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 2.5V, 4.5V | 50mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 5.6nC @ 4V | ±10V | 810pF @ 10V | - | 200mW (Ta) | 150°C | Surface Mount | SC-95 | SC-95 |