Taiwan Semiconductor Corporation Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 301
Seite 10/11
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A ITO220 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±30V | 654pF @ 50V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 12.5A TO252 |
2.664 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Tc) | 4.5V, 10V | 50mOhm @ 8A, 10V | 3V @ 250µA | 7nC @ 4.5V | ±20V | 270pF @ 25V | - | 12.5W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5.6A TO251 |
8.334 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.6A (Ta) | 10V | 1.4Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 900pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5.6A TO252 |
3.438 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.6A (Ta) | 10V | 1.4Ohm @ 2.8A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 900pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A TO251 |
3.348 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 250µA | 20.7nC @ 10V | ±30V | 1248pF @ 25V | - | 89W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A TO252 |
4.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 250µA | 20.7nC @ 10V | ±30V | 1248pF @ 25V | - | 89W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A ITO220 |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.6Ohm @ 3A, 10V | 4.5V @ 250µA | 18.3nC @ 10V | ±30V | 872pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 6A TO220 |
3.222 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.6Ohm @ 3A, 10V | 4.5V @ 250µA | 18.3nC @ 10V | ±30V | 872pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 7A ITO220 |
2.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.45Ohm @ 3A, 10V | 4V @ 250µA | 27.8nC @ 10V | ±30V | 1406pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 7.2A TO251 |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 7.2A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4V @ 250µA | 26.6nC @ 10V | ±30V | 1595pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 7.2A TO252 |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 7.2A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4V @ 250µA | 26.6nC @ 10V | ±30V | 1595pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A ITO220 |
2.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 2006pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V TO92 |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 8SOP |
3.060 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 12mOhm @ 11A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 3680pF @ 8V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
3.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V ITO220 |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 2006pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
4.698 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±8V | 640pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.932 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
7.650 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 48W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2.322 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 42W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 104W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 27W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2.808 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 27W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
8.262 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
3.526 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |