Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 377

Seite 12/13

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SC4881,LS1SUMIF(M	Toshiba Semiconductor and Storage	TRANS NPN 5A 50V TO220-3	7.182	-	NPN	5A	50V	400mV @ 125mA, 2.5A	1µA (ICBO)	100 @ 1A, 1V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC4935-Y,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO220-3	3.294	-	NPN	3A	50V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	2W	80MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171(LBS2MATQ,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3	8.820	-	NPN	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171(ONK,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3	8.856	-	NPN	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,MATUDQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3	4.896	-	NPN	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,ONKQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3	3.906	-	NPN	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5171,Q(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3	6.606	-	NPN	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5172(YAZK,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 5A 400V TO220-3	6.912	-	NPN	5A	400V	1V @ 250mA, 2A	20µA (ICBO)	20 @ 500mA, 5V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5201(T6MURATAFM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3	3.834	-	NPN	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3	4.770	-	NPN	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201,F(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3	3.258	-	NPN	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3	2.196	-	NPN	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5201,T6MURAF(J	Toshiba Semiconductor and Storage	TRANS NPN 50MA 600V TO226-3	4.824	-	NPN	50mA	600V	1V @ 500mA, 20mA	1µA (ICBO)	100 @ 20mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5459(TOJS,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 3A 400V TO220-3	8.028	-	NPN	3A	400V	1V @ 150mA, 1.2A	100µA (ICBO)	20 @ 300mA, 5V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SC5549,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 400V TO226-3	6.714	-	NPN	1A	400V	1V @ 25mA, 200mA	100µA (ICBO)	20 @ 40mA, 5V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC5930(T2MITUM,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71	2.322	-	NPN	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	40 @ 200mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC5930(TPF2,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71	6.552	-	NPN	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	40 @ 200mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6010(T2MITUM,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71	2.088	-	NPN	1A	600V	1V @ 75mA, 600mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6040(TPF2,Q,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71	6.444	-	NPN	1A	800V	1V @ 100mA, 800mA	100µA (ICBO)	60 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6040,T2Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 800V SC71	7.362	-	NPN	1A	800V	1V @ 100mA, 800mA	100µA (ICBO)	60 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6042,T2HOSH1Q(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 375V SC71	6.534	-	NPN	1A	375V	1V @ 100mA, 800mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6042,T2WNLQ(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 375V SC71	7.830	-	NPN	1A	375V	1V @ 100mA, 800mA	100µA (ICBO)	100 @ 100mA, 5V	1W	-	150°C (TJ)	Through Hole	SC-71	MSTM
2SC6139,T2F(M	Toshiba Semiconductor and Storage	TRANS NPN 1.5A 160V SC71	3.456	-	NPN	1.5A	160V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
2SD2129,ALPSQ(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	4.770	-	NPN	3A	100V	2V @ 12mA, 3A	100µA (ICBO)	2000 @ 1.5A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2129,LS4ALPSQ(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3	7.164	-	NPN	3A	100V	2V @ 12mA, 3A	100µA (ICBO)	2000 @ 1.5A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
2SD2206(T6CANO,F,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3	5.436	-	NPN	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2206(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3	8.946	-	NPN	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2206(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3	6.786	-	NPN	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2206,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 100V TO226-3	5.940	-	NPN	2A	100V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SD2206A(T6SEP,F,M	Toshiba Semiconductor and Storage	TRANS NPN 2A 120V TO226-3	5.634	-	NPN	2A	120V	1.5V @ 1mA, 1A	-	2000 @ 1A, 2V	900mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

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