Infineon Technologies Transistoren - FETs, MOSFETs - Arrays
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Arrays
HerstellerInfineon Technologies
Datensätze 393
Seite 3/14
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Serie | FET-Typ | FET-Funktion | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung - max | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Infineon Technologies |
MOSFET MOD 1200V 25A |
6.696 |
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CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
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Infineon Technologies |
MOSFET MOD 1200V 50A |
7.542 |
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CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
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Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8SOIC |
25.122 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 3.6A 8-SOIC |
135.738 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
250.962 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 1.7A MICRO8 |
2.304 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.7A | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8SOIC |
2.970 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 1.7A MICRO8 |
7.614 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.7A | 270mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | 180pF @ 25V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.3A 8-SOIC |
2.196 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 250mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
8.838 |
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HEXFET® | 2 N-Channel (Dual) | Standard | 30V | 6.5A | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 4A/3A 8SOIC |
6.174 |
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HEXFET® | N and P-Channel | Standard | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 2.3A 8-SOIC |
5.598 |
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HEXFET® | 2 P-Channel (Dual) | Standard | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 30V 3.6A 8-SOIC |
4.068 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7.128 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC |
7.470 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
7.110 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 20V 4.7A 8SOIC |
2.610 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.7A | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 23.9nC @ 4.5V | 920pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC |
7.704 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.8A, 8.9A | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC |
6.462 |
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HEXFET® | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC |
6.624 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC |
4.374 |
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HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A, 12A | 9.3mOhm @ 12A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 20V 8-SOIC |
8.982 |
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HEXFET® | N and P-Channel | Logic Level Gate | 20V | 6.6A, 5.3A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8-SOIC |
6.246 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2 N-CH 30V 20A WISON-8 |
4.122 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 20A (Tc) | 18mOhm @ 9A, 10V | 2V @ 250µA | 2.6nC @ 4.5V | 360pF @ 15V | 17W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8.208 |
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Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | 1990pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
2.268 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 9.5A (Ta), 25A (Tc) | 9.5mOhm @ 9A, 10V | 2V @ 250µA | 5.6nC @ 4.5V | 800pF @ 15V | 1.9W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-WISON-8 |
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Infineon Technologies |
MOSFET 2N-CH 30V 11.5A 8TDSON |
4.644 |
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OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11.5A | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 41nC @ 10V | 3500pF @ 15V | 57W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2P-CH 30V 8A 8-SOIC |
4.500 |
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HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N-CH 30V 8TISON |
7.146 |
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OptiMOS™ | 2 N-Channel | Standard | - | 17A (Ta) | 5mOhm @ 7A, 10V | 2V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET 2P-CH 30V 7A 8DSO |
7.848 |
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OptiMOS™ | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 49nC @ 10V | 2678pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |