Transphorm Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTransphorm
Datensätze 28
Seite 1/1
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Transphorm |
GANFET N-CH 650V 16A TO220AB |
10.656 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 900V 15A TO220AB |
18.864 |
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- | N-Channel | GaNFET (Gallium Nitride) | 900V | 15A (Tc) | 10V | 205mOhm @ 10A, 10V | 2.6V @ 500µA | 10nC @ 8V | ±18V | 780pF @ 600V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 27A TO220 |
8.916 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 27A (Tc) | 10V | 72mOhm @ 17A, 8V | 2.6V @ 400uA | 14nC @ 8V | ±18V | 1130pF @ 400V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 34A TO247-3 |
7.524 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24nC @ 10V | ±20V | 1000pF @ 400V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 46.5A TO247-3 |
17.016 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 46.5A (Tc) | 12V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 36nC @ 10V | ±20V | 1500pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 35A TO247 |
12.948 |
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Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 600V 17A TO220 |
8.118 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
7.416 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6.192 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
9.528 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 47A TO247-3 |
8.028 |
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Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24nC @ 10V | ±20V | 1500pF @ 400V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 600V 17A TO220 |
9.192 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
650 V 25 A GAN FET |
7.692 |
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TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
650 V 25 A GAN FET |
8.796 |
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TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
8.892 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 20A 3PQFN |
6.960 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 14A, 8V | 2.6V @ 300µA | 42nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7.542 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 36A TO247 |
6.984 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 50A TO247 |
7.320 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42nC @ 8V | ±18V | 2197pF @ 400V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6.354 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
5.778 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
4.752 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
8.442 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7.308 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
4.428 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
2.754 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
7.254 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
3.438 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |